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Title: Packaging of solid state devices

Abstract

A package for one or more solid state devices in a single module that allows for operation at high voltage, high current, or both high voltage and high current. Low thermal resistance between the solid state devices and an exterior of the package and matched coefficient of thermal expansion between the solid state devices and the materials used in packaging enables high power operation. The solid state devices are soldered between two layers of ceramic with metal traces that interconnect the devices and external contacts. This approach provides a simple method for assembling and encapsulating high power solid state devices.

Inventors:
;
Issue Date:
Research Org.:
Applied Pulsed Power, Inc., Ithaca, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175606
Patent Number(s):
6982482
Application Number:
10/785,345
Assignee:
Applied Pulsed Power, Inc. (Ithaca, NY)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-00ER82948
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Glidden, Steven C., and Sanders, Howard D. Packaging of solid state devices. United States: N. p., 2006. Web.
Glidden, Steven C., & Sanders, Howard D. Packaging of solid state devices. United States.
Glidden, Steven C., and Sanders, Howard D. Tue . "Packaging of solid state devices". United States. https://www.osti.gov/servlets/purl/1175606.
@article{osti_1175606,
title = {Packaging of solid state devices},
author = {Glidden, Steven C. and Sanders, Howard D.},
abstractNote = {A package for one or more solid state devices in a single module that allows for operation at high voltage, high current, or both high voltage and high current. Low thermal resistance between the solid state devices and an exterior of the package and matched coefficient of thermal expansion between the solid state devices and the materials used in packaging enables high power operation. The solid state devices are soldered between two layers of ceramic with metal traces that interconnect the devices and external contacts. This approach provides a simple method for assembling and encapsulating high power solid state devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {1}
}