Light emitting diode with porous SiC substrate and method for fabricating
Abstract
A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Cree, Inc., Goleta, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175568
- Patent Number(s):
- 6972438
- Application Number:
- 10/676,953
- Assignee:
- Cree, Inc. (Goleta, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-00NT40985
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Li, Ting, Ibbetson, James, and Keller, Bernd. Light emitting diode with porous SiC substrate and method for fabricating. United States: N. p., 2005.
Web.
Li, Ting, Ibbetson, James, & Keller, Bernd. Light emitting diode with porous SiC substrate and method for fabricating. United States.
Li, Ting, Ibbetson, James, and Keller, Bernd. Tue .
"Light emitting diode with porous SiC substrate and method for fabricating". United States. https://www.osti.gov/servlets/purl/1175568.
@article{osti_1175568,
title = {Light emitting diode with porous SiC substrate and method for fabricating},
author = {Li, Ting and Ibbetson, James and Keller, Bernd},
abstractNote = {A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {12}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
journal, October 1993
- Schnitzer, I.; Yablonovitch, E.; Caneau, C.
- Applied Physics Letters, Vol. 63, Issue 16
40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography
journal, July 2000
- Windisch, R.; Dutta, B.; Kuijk, M.
- IEEE Transactions on Electron Devices, Vol. 47, Issue 7
Direct observation of porous SiC formed by anodization in HF
journal, May 1993
- Shor, Joseph S.; Grimberg, Ilana; Weiss, Ben‐Zion
- Applied Physics Letters, Vol. 62, Issue 22
Blue electroluminescence from porous silicon carbide
journal, December 1994
- Mimura, Hidenori; Matsumoto, Takahiro; Kanemitsu, Yoshihiko
- Applied Physics Letters, Vol. 65, Issue 26
Surface, Pore Morphology, and Optical Properties of Porous 4H-SiC
journal, January 2001
- Zangooie, S.; Arwin, H.
- Journal of The Electrochemical Society, Vol. 148, Issue 6
Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes
journal, October 2001
- Windisch, R.; Rooman, C.; Meinlschmidt, S.
- Applied Physics Letters, Vol. 79, Issue 15
Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes
journal, January 2002
- Windisch, R.; Rooman, C.; Dutta, B.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2
High brightness AlGaInP light-emitting diodes
journal, January 2002
- Streubel, K.; Linder, N.; Wirth, R.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 2