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Title: Light emitting diode with porous SiC substrate and method for fabricating

Abstract

A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

Inventors:
; ;
Issue Date:
Research Org.:
Cree, Inc., Goleta, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175568
Patent Number(s):
6972438
Application Number:
10/676,953
Assignee:
Cree, Inc. (Goleta, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FC26-00NT40985
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Li, Ting, Ibbetson, James, and Keller, Bernd. Light emitting diode with porous SiC substrate and method for fabricating. United States: N. p., 2005. Web.
Li, Ting, Ibbetson, James, & Keller, Bernd. Light emitting diode with porous SiC substrate and method for fabricating. United States.
Li, Ting, Ibbetson, James, and Keller, Bernd. Tue . "Light emitting diode with porous SiC substrate and method for fabricating". United States. https://www.osti.gov/servlets/purl/1175568.
@article{osti_1175568,
title = {Light emitting diode with porous SiC substrate and method for fabricating},
author = {Li, Ting and Ibbetson, James and Keller, Bernd},
abstractNote = {A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {12}
}

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Works referenced in this record:

30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
journal, October 1993


40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography
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Direct observation of porous SiC formed by anodization in HF
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Surface, Pore Morphology, and Optical Properties of Porous 4H-SiC
journal, January 2001


Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes
journal, October 2001


Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes
journal, January 2002


High brightness AlGaInP light-emitting diodes
journal, January 2002