Flip-chip light emitting diode with resonant optical microcavity
Abstract
A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175565
- Patent Number(s):
- 6969874
- Application Number:
- 10/459,965
- Assignee:
- Sandia Corporation
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Gee, James M., Bogart, Katherine H.A., and Fischer, Arthur J. Flip-chip light emitting diode with resonant optical microcavity. United States: N. p., 2005.
Web.
Gee, James M., Bogart, Katherine H.A., & Fischer, Arthur J. Flip-chip light emitting diode with resonant optical microcavity. United States.
Gee, James M., Bogart, Katherine H.A., and Fischer, Arthur J. Tue .
"Flip-chip light emitting diode with resonant optical microcavity". United States. https://www.osti.gov/servlets/purl/1175565.
@article{osti_1175565,
title = {Flip-chip light emitting diode with resonant optical microcavity},
author = {Gee, James M. and Bogart, Katherine H.A. and Fischer, Arthur J.},
abstractNote = {A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {11}
}
Works referenced in this record:
Impact of planar microcavity effects on light extraction-Part II: selected exact simulations and role of photon recycling
journal, January 1998
- Benisty, H.; De Neve, H.; Weisbuch, C.
- IEEE Journal of Quantum Electronics, Vol. 34, Issue 9
Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
journal, May 2001
- Waldrip, K. E.; Han, J.; Figiel, J. J.
- Applied Physics Letters, Vol. 78, Issue 21, p. 3205-3207
Resonant cavity light‐emitting diode
journal, February 1992
- Schubert, E. F.; Wang, Y. ‐H.; Cho, A. Y.
- Applied Physics Letters, Vol. 60, Issue 8
High-power AlGaInN flip-chip light-emitting diodes
journal, May 2001
- Wierer, J. J.; Steigerwald, D. A.; Krames, M. R.
- Applied Physics Letters, Vol. 78, Issue 22
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
journal, April 2003
- Shen, Y. C.; Wierer, J. J.; Krames, M. R.
- Applied Physics Letters, Vol. 82, Issue 14
Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
journal, September 2001
- Adivarahan, V.; Simin, G.; Tamulaitis, G.
- Applied Physics Letters, Vol. 79, Issue 12
Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends
journal, January 1998
- Benisty, H.; De Neve, H.; Weisbuch, C.
- IEEE Journal of Quantum Electronics, Vol. 34, Issue 9