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Title: Domain epitaxy for thin film growth

Abstract

A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

Inventors:
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175528
Patent Number(s):
6955985
Application Number:
10/608,780
Assignee:
Kopin Corporation (Taunton, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Narayan, Jagdish. Domain epitaxy for thin film growth. United States: N. p., 2005. Web.
Narayan, Jagdish. Domain epitaxy for thin film growth. United States.
Narayan, Jagdish. Tue . "Domain epitaxy for thin film growth". United States. https://www.osti.gov/servlets/purl/1175528.
@article{osti_1175528,
title = {Domain epitaxy for thin film growth},
author = {Narayan, Jagdish},
abstractNote = {A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {10}
}

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