Hafnium nitride buffer layers for growth of GaN on silicon
Abstract
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175464
- Patent Number(s):
- 6929867
- Application Number:
- 10/439,952
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-76F00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Armitage, Robert D., and Weber, Eicke R. Hafnium nitride buffer layers for growth of GaN on silicon. United States: N. p., 2005.
Web.
Armitage, Robert D., & Weber, Eicke R. Hafnium nitride buffer layers for growth of GaN on silicon. United States.
Armitage, Robert D., and Weber, Eicke R. Tue .
"Hafnium nitride buffer layers for growth of GaN on silicon". United States. https://www.osti.gov/servlets/purl/1175464.
@article{osti_1175464,
title = {Hafnium nitride buffer layers for growth of GaN on silicon},
author = {Armitage, Robert D. and Weber, Eicke R.},
abstractNote = {Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {8}
}
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