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Title: Hafnium nitride buffer layers for growth of GaN on silicon

Abstract

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

Inventors:
;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175464
Patent Number(s):
6929867
Application Number:
10/439,952
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC03-76F00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Armitage, Robert D., and Weber, Eicke R. Hafnium nitride buffer layers for growth of GaN on silicon. United States: N. p., 2005. Web.
Armitage, Robert D., & Weber, Eicke R. Hafnium nitride buffer layers for growth of GaN on silicon. United States.
Armitage, Robert D., and Weber, Eicke R. Tue . "Hafnium nitride buffer layers for growth of GaN on silicon". United States. https://www.osti.gov/servlets/purl/1175464.
@article{osti_1175464,
title = {Hafnium nitride buffer layers for growth of GaN on silicon},
author = {Armitage, Robert D. and Weber, Eicke R.},
abstractNote = {Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {8}
}

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Works referenced in this record:

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
journal, July 1995


Thermal Annealing Effects on P-Type Mg-Doped GaN Films
journal, February 1992


Atomic Scale Indium Distribution in a G a N / I n 0.43 G a 0.57 N / A l 0.1 G a 0.9 N Quantum Well Structure
journal, November 1997


P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
journal, December 1989


The working principle of the hollow-anode plasma source
journal, November 1995