DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Direct-patterned optical waveguides on amorphous silicon films

Abstract

An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175452
Patent Number(s):
6925216
Application Number:
10/676,876
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Vernon, Steve, Bond, Tiziana C., Bond, Steven W., Pocha, Michael D., and Hau-Riege, Stefan. Direct-patterned optical waveguides on amorphous silicon films. United States: N. p., 2005. Web.
Vernon, Steve, Bond, Tiziana C., Bond, Steven W., Pocha, Michael D., & Hau-Riege, Stefan. Direct-patterned optical waveguides on amorphous silicon films. United States.
Vernon, Steve, Bond, Tiziana C., Bond, Steven W., Pocha, Michael D., and Hau-Riege, Stefan. Tue . "Direct-patterned optical waveguides on amorphous silicon films". United States. https://www.osti.gov/servlets/purl/1175452.
@article{osti_1175452,
title = {Direct-patterned optical waveguides on amorphous silicon films},
author = {Vernon, Steve and Bond, Tiziana C. and Bond, Steven W. and Pocha, Michael D. and Hau-Riege, Stefan},
abstractNote = {An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {8}
}

Works referenced in this record:

Structural, Optical, and Electrical Properties of Amorphous Silicon Films
journal, March 1970


Influence of Ar impurities on optical refractive index of sputter deposited a–Si films
journal, July 1997


Supercooling and Nucleation of Silicon after Laser Melting
journal, June 1988


Symmetrical waveguide devices fabricated by direct UV writing
journal, February 2002


Amorphous silicon-based guided-wave passive and active devices for silicon integrated optoelectronics
journal, January 1998


Hot-wire deposition of photonic-grade amorphous silicon
journal, September 2001


Propagation of light beams along line defects formed in a-Si/SiO2 three-dimensional photonic crystals: Fabrication and observation
journal, February 1999


Relationship between fluence gradient and lateral grain growth in spatially controlled excimer laser crystallization of amorphous silicon films
journal, November 2000