DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High carrier concentration p-type transparent conducting oxide films

Abstract

A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

Inventors:
;
Issue Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175399
Patent Number(s):
6908782
Application Number:
10/344,446
Assignee:
Midwest Research Instittue (Kansas City, MO)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yan, Yanfa, and Zhang, Shengbai. High carrier concentration p-type transparent conducting oxide films. United States: N. p., 2005. Web.
Yan, Yanfa, & Zhang, Shengbai. High carrier concentration p-type transparent conducting oxide films. United States.
Yan, Yanfa, and Zhang, Shengbai. Tue . "High carrier concentration p-type transparent conducting oxide films". United States. https://www.osti.gov/servlets/purl/1175399.
@article{osti_1175399,
title = {High carrier concentration p-type transparent conducting oxide films},
author = {Yan, Yanfa and Zhang, Shengbai},
abstractNote = {A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {6}
}

Works referenced in this record:

Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO
journal, January 2001


A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds
journal, March 1998


Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
journal, November 1997


Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source
journal, February 2001


Deposition Schemes for Low Cost Transparent Conductors for Photovoltaics
journal, January 1996


Control of Doping by Impurity Chemical Potentials: Predictions for p -Type ZnO
journal, June 2001


Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
journal, January 1994


p ‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
journal, November 1990


p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping
journal, November 1999


Microscopic Origin of the Phenomenological Equilibrium “Doping Limit Rule” in n -Type III-V Semiconductors
journal, February 2000


Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE
journal, February 2000


First-principles study of native point defects in ZnO
journal, June 2000


Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
journal, October 1985


Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO
journal, July 1983