High carrier concentration p-type transparent conducting oxide films

Yan, Yanfa; Zhang, Shengbai

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Title: High carrier concentration p-type transparent conducting oxide films

Abstract

A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

Inventors:: Yan, Yanfa; Zhang, Shengbai

Issue Date:: 2005-06-21

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175399

Patent Number(s):: 6908782

Application Number:: 10/344,446

Assignee:: Midwest Research Instittue (Kansas City, MO)

Patent Classifications (CPCs):: C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
C01G9/02 - Oxides

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/407 - {of zinc, germanium, cadmium, indium, tin, thallium or bismuth}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/022466 - {made of transparent conductive layers, e.g. TCO, ITO layers}
H01L31/022483 - {composed of zinc oxide [ZnO]}
H01L31/02963 - {characterised by the doping material}
H01L31/1884 - {Manufacture of transparent electrodes, e.g. TCO, ITO}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/12681 - Ga-, In-, Tl- or Group VA metal-base component

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DOE Contract Number:: AC36-99GO10337

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Yan, Yanfa, and Zhang, Shengbai. High carrier concentration p-type transparent conducting oxide films.  United States: N. p., 2005. 
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                    Yan, Yanfa, & Zhang, Shengbai. High carrier concentration p-type transparent conducting oxide films.  United States.

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                    Yan, Yanfa, and Zhang, Shengbai. Tue .  
        "High carrier concentration p-type transparent conducting oxide films".  United States.  https://www.osti.gov/servlets/purl/1175399.

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@article{osti_1175399,

  title        = {High carrier concentration p-type transparent conducting oxide films},

  author       = {Yan, Yanfa and Zhang, Shengbai},

  abstractNote = {A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2005},

  month        = {6}

}

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Works referenced in this record:

Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO
journal, January 2001

Zhang, S. B.; Wei, S. -H.; Zunger, Alex
Physical Review B, Vol. 63, Issue 7
https://doi.org/10.1103/PhysRevB.63.075205

A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds
journal, March 1998

Zhang, S. B.; Wei, Su-Huai; Zunger, Alex
Journal of Applied Physics, Vol. 83, Issue 6
https://doi.org/10.1063/1.367120

Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells
journal, May 1991

Hu, Jianhua; Gordon, Roy G.
Solar Cells, Vol. 30, Issue 1-4
https://doi.org/10.1016/0379-6787(91)90076-2

Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
journal, November 1997

Minegishi, Kazunori; Koiwai, Yasushi; Kikuchi, Yukinobu
Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 11A
https://doi.org/10.1143/JJAP.36.L1453

Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source
journal, February 2001

Guo, Xin-Li; Tabata, Hitoshi; Kawai, Tomoji
Journal of Crystal Growth, Vol. 223, Issue 1-2
https://doi.org/10.1016/S0022-0248(00)00952-0

Deposition Schemes for Low Cost Transparent Conductors for Photovoltaics
journal, January 1996

Delahoy, A. E.; Cherny, M.
MRS Proceedings, Vol. 426
https://doi.org/10.1557/PROC-426-467

Control of Doping by Impurity Chemical Potentials: Predictions for $p$ -Type ZnO
journal, June 2001

Yan, Yanfa; Zhang, S. B.; Pantelides, S. T.
Physical Review Letters, Vol. 86, Issue 25
https://doi.org/10.1103/PhysRevLett.86.5723

Achievement of well conducting wide band-gap semiconductors: Role of solubility and of nonequilibrium impurity incorporation
journal, April 1989

Neumark, G. F.
Physical Review Letters, Vol. 62, Issue 15
https://doi.org/10.1103/PhysRevLett.62.1800

Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
journal, January 1994

Chadi, D. J.
Physical Review Letters, Vol. 72, Issue 4
https://doi.org/10.1103/PhysRevLett.72.534

p ‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
journal, November 1990

Park, R. M.; Troffer, M. B.; Rouleau, C. M.
Applied Physics Letters, Vol. 57, Issue 20
https://doi.org/10.1063/1.103919

p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping
journal, November 1999

Joseph, Mathew; Tabata, Hitoshi; Kawai, Tomoji
Japanese Journal of Applied Physics, Vol. 38, Issue Part 2, No. 11A
https://doi.org/10.1143/JJAP.38.L1205

Microscopic Origin of the Phenomenological Equilibrium “Doping Limit Rule” in $n$ -Type III-V Semiconductors
journal, February 2000

Zhang, S. B.; Wei, S. -H.; Zunger, Alex
Physical Review Letters, Vol. 84, Issue 6
https://doi.org/10.1103/PhysRevLett.84.1232

Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE
journal, February 2000

Iwata, K.; Fons, P.; Yamada, A.
Journal of Crystal Growth, Vol. 209, Issue 2-3
https://doi.org/10.1016/S0022-0248(99)00613-2

First-principles study of native point defects in ZnO
journal, June 2000

Kohan, A. F.; Ceder, G.; Morgan, D.
Physical Review B, Vol. 61, Issue 22
https://doi.org/10.1103/PhysRevB.61.15019

Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
journal, October 1985

Minami, Tadatsugu; Sato, Hirotoshi; Nanto, Hidehito
Japanese Journal of Applied Physics, Vol. 24, Issue Part 2, No. 10
https://doi.org/10.1143/JJAP.24.L781

Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO
journal, July 1983

Kobayashi, Akiko; Sankey, Otto F.; Dow, John D.
Physical Review B, Vol. 28, Issue 2
https://doi.org/10.1103/PhysRevB.28.946

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Similar Records

Title: High carrier concentration p-type transparent conducting oxide films

Abstract

Citation Formats

Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO journal, January 2001

A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds journal, March 1998

Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells journal, May 1991

Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition journal, November 1997

Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source journal, February 2001

Deposition Schemes for Low Cost Transparent Conductors for Photovoltaics journal, January 1996

Control of Doping by Impurity Chemical Potentials: Predictions for p -Type ZnO journal, June 2001

Achievement of well conducting wide band-gap semiconductors: Role of solubility and of nonequilibrium impurity incorporation journal, April 1989

Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors journal, January 1994

p ‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth journal, November 1990

p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping journal, November 1999

Microscopic Origin of the Phenomenological Equilibrium “Doping Limit Rule” in n -Type III-V Semiconductors journal, February 2000

Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE journal, February 2000

First-principles study of native point defects in ZnO journal, June 2000

Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering journal, October 1985

Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO journal, July 1983

Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO
journal, January 2001

A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds
journal, March 1998

Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells
journal, May 1991

Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
journal, November 1997

Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source
journal, February 2001

Deposition Schemes for Low Cost Transparent Conductors for Photovoltaics
journal, January 1996

Control of Doping by Impurity Chemical Potentials: Predictions for $p$ -Type ZnO
journal, June 2001

Achievement of well conducting wide band-gap semiconductors: Role of solubility and of nonequilibrium impurity incorporation
journal, April 1989

Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
journal, January 1994

p ‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
journal, November 1990

p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping
journal, November 1999

Microscopic Origin of the Phenomenological Equilibrium “Doping Limit Rule” in $n$ -Type III-V Semiconductors
journal, February 2000

Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE
journal, February 2000

First-principles study of native point defects in ZnO
journal, June 2000

Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
journal, October 1985

Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO
journal, July 1983