High carrier concentration p-type transparent conducting oxide films
Abstract
A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175399
- Patent Number(s):
- 6908782
- Application Number:
- 10/344,446
- Assignee:
- Midwest Research Instittue (Kansas City, MO)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Yan, Yanfa, and Zhang, Shengbai. High carrier concentration p-type transparent conducting oxide films. United States: N. p., 2005.
Web.
Yan, Yanfa, & Zhang, Shengbai. High carrier concentration p-type transparent conducting oxide films. United States.
Yan, Yanfa, and Zhang, Shengbai. Tue .
"High carrier concentration p-type transparent conducting oxide films". United States. https://www.osti.gov/servlets/purl/1175399.
@article{osti_1175399,
title = {High carrier concentration p-type transparent conducting oxide films},
author = {Yan, Yanfa and Zhang, Shengbai},
abstractNote = {A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {6}
}
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