Selective etchant for oxide sacrificial material in semiconductor device fabrication

Clews, Peggy J.; Mani, Seethambal S.

Title: Selective etchant for oxide sacrificial material in semiconductor device fabrication

Abstract

An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combination of hydrofluoric acid (HF) and sulfuric acid (H.sub.2 SO.sub.4). These acids can be used in the ratio of 1:3 to 3:1 HF:H.sub.2 SO.sub.4 to remove all or part of the oxide sacrificial material while providing a high etch selectivity for non-oxide materials including polysilicon, silicon nitride and metals comprising aluminum. Both the HF and H.sub.2 SO.sub.4 can be provided as "semiconductor grade" acids in concentrations of generally 40-50% by weight HF, and at least 90% by weight H.sub.2 SO.sub.4.

Inventors:: Clews, Peggy J.; Mani, Seethambal S.

Issue Date:: 2005-05-17

Research Org.:: Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175355

Patent Number(s):: 6893578

Application Number:: 10/010,850

Assignee:: Sandia Corporation

Patent Classifications (CPCs):: C - CHEMISTRY C03 - GLASS C03C - CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

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C - CHEMISTRY C03 - GLASS C03C - CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS
C03C15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
B81C1/00595 - {Control etch selectivity}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/31111 - {by chemical means}

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Clews, Peggy J., and Mani, Seethambal S. Selective etchant for oxide sacrificial material in semiconductor device fabrication.  United States: N. p., 2005. 
        Web.

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                    Clews, Peggy J., & Mani, Seethambal S. Selective etchant for oxide sacrificial material in semiconductor device fabrication.  United States.

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                    Clews, Peggy J., and Mani, Seethambal S. Tue .  
        "Selective etchant for oxide sacrificial material in semiconductor device fabrication".  United States.  https://www.osti.gov/servlets/purl/1175355.

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@article{osti_1175355,

  title        = {Selective etchant for oxide sacrificial material in semiconductor device fabrication},

  author       = {Clews, Peggy J. and Mani, Seethambal S.},

  abstractNote = {An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combination of hydrofluoric acid (HF) and sulfuric acid (H.sub.2 SO.sub.4). These acids can be used in the ratio of 1:3 to 3:1 HF:H.sub.2 SO.sub.4 to remove all or part of the oxide sacrificial material while providing a high etch selectivity for non-oxide materials including polysilicon, silicon nitride and metals comprising aluminum. Both the HF and H.sub.2 SO.sub.4 can be provided as "semiconductor grade" acids in concentrations of generally 40-50% by weight HF, and at least 90% by weight H.sub.2 SO.sub.4.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2005},

  month        = {5}

}

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Works referenced in this record:

Sacrificial oxide etching compatible with aluminum metallization
conference, January 1997

Gennissen, P. T. J.; French, P. J.
Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97)
https://doi.org/10.1109/SENSOR.1997.613624

Problems of sacrificial etching in the presence of aluminium interconnect
journal, July 1997

Goosen, J. F. L.; van DrieEnhuizen, B. P.; French, P. J.
Sensors and Actuators A: Physical, Vol. 62, Issue 1-3
https://doi.org/10.1016/S0924-4247(97)01562-8

Silicon dioxide sacrificial layer etching in surface micromachining
journal, March 1997

Bühler, J.; Steiner, F-P; Baltes, H.
Journal of Micromechanics and Microengineering, Vol. 7, Issue 1
https://doi.org/10.1088/0960-1317/7/1/001

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Similar Records

Title: Selective etchant for oxide sacrificial material in semiconductor device fabrication

Abstract

Citation Formats

Sacrificial oxide etching compatible with aluminum metallization conference, January 1997

Problems of sacrificial etching in the presence of aluminium interconnect journal, July 1997

Silicon dioxide sacrificial layer etching in surface micromachining journal, March 1997

Sacrificial oxide etching compatible with aluminum metallization
conference, January 1997

Problems of sacrificial etching in the presence of aluminium interconnect
journal, July 1997

Silicon dioxide sacrificial layer etching in surface micromachining
journal, March 1997