Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
Abstract
A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175230
- Patent Number(s):
- 6849882
- Application Number:
- 10/102,272
- Assignee:
- Cree Inc. (Goleta, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Chavarkar, Prashant, Smorchkova, Ioulia P., Keller, Stacia, Mishra, Umesh, Walukiewicz, Wladyslaw, and Wu, Yifeng. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer. United States: N. p., 2005.
Web.
Chavarkar, Prashant, Smorchkova, Ioulia P., Keller, Stacia, Mishra, Umesh, Walukiewicz, Wladyslaw, & Wu, Yifeng. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer. United States.
Chavarkar, Prashant, Smorchkova, Ioulia P., Keller, Stacia, Mishra, Umesh, Walukiewicz, Wladyslaw, and Wu, Yifeng. Tue .
"Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer". United States. https://www.osti.gov/servlets/purl/1175230.
@article{osti_1175230,
title = {Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer},
author = {Chavarkar, Prashant and Smorchkova, Ioulia P. and Keller, Stacia and Mishra, Umesh and Walukiewicz, Wladyslaw and Wu, Yifeng},
abstractNote = {A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {2}
}
Works referenced in this record:
Undoped AlGaN/GaN HEMTs for microwave power amplification
journal, March 2001
- Eastman, L. F.; Tilak, V.; Smart, J.
- IEEE Transactions on Electron Devices, Vol. 48, Issue 3
High-power 10-GHz operation of AlGaN HFET's on insulating SiC
journal, June 1998
- Sullivan, G. J.; Chen, M. Y.; Higgins, J. A.
- IEEE Electron Device Letters, Vol. 19, Issue 6
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
journal, February 1998
- Ping, A. T.; Chen, Q.; Yang, J. W.
- IEEE Electron Device Letters, Vol. 19, Issue 2
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
journal, February 1998
- Gaska, R.; Yang, J. W.; Osinsky, A.
- Applied Physics Letters, Vol. 72, Issue 6
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
journal, February 1998
- Wu, Y. -F.; Keller, B. P.; Fini, P.
- IEEE Electron Device Letters, Vol. 19, Issue 2
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
journal, February 2000
- Khan, M. A.; Hu, X.; Sumin, G.
- IEEE Electron Device Letters, Vol. 21, Issue 2
AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy
journal, March 2001
- Micovic, M.; Kurdoghlian, A.; Janke, P.
- IEEE Transactions on Electron Devices, Vol. 48, Issue 3
Monte Carlo simulation of electron transport in gallium nitride
journal, August 1993
- Gelmont, B.; Kim, K.; Shur, M.
- Journal of Applied Physics, Vol. 74, Issue 3
An insulator-lined silicon substrate-via technology with high aspect ratio
journal, January 2001
- Wu, J. H.; Scholvin, J.; Del Alamo, J. A.
- IEEE Transactions on Electron Devices, Vol. 48, Issue 9, p. 2181-2183
High-temperature performance of AlGaN/GaN HFETs on SiC substrates
journal, October 1997
- Gaska, R.; Chen, Q.; Yang, J.
- IEEE Electron Device Letters, Vol. 18, Issue 10
Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
journal, January 2001
- Hsu, L.; Walukiewicz, W.
- Journal of Applied Physics, Vol. 89, Issue 3