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Title: Silicon micro-mold and method for fabrication

Abstract

The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon micro-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

Inventors:
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175199
Patent Number(s):
6841339
Application Number:
10/072,394
Assignee:
Sandia National Laboratories
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B29 - WORKING OF PLASTICS B29C - SHAPING OR JOINING OF PLASTICS
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Morales, Alfredo M. Silicon micro-mold and method for fabrication. United States: N. p., 2005. Web.
Morales, Alfredo M. Silicon micro-mold and method for fabrication. United States.
Morales, Alfredo M. Tue . "Silicon micro-mold and method for fabrication". United States. https://www.osti.gov/servlets/purl/1175199.
@article{osti_1175199,
title = {Silicon micro-mold and method for fabrication},
author = {Morales, Alfredo M.},
abstractNote = {The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon micro-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 11 00:00:00 EST 2005},
month = {Tue Jan 11 00:00:00 EST 2005}
}

Works referenced in this record:

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New type X-ray mask fabricated using inductively coupled plasma deepetching
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Fabrication of intermediate mask for deep x-ray lithography
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DEM technique: a new three-dimensional microfabrication technique for nonsilicon materials
conference, March 1999


Fabrication of HARM structures by deep-X-ray lithography using graphite mask technology
journal, February 2000


Mask making for synchrotron radiation lithography
journal, December 1986


Inexpensive, quickly producable X-ray mask for LIGA
journal, July 1999