Lithography process for patterning HgI2 photonic devices
Abstract
A photolithographic process forms patterns on HgI.sub.2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI.sub.2 surfaces and for producing trenches in HgI.sub.2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175146
- Patent Number(s):
- 6821714
- Application Number:
- 09/712,082
- Assignee:
- Sandia National Laboratories
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Mescher, Mark J., James, Ralph B., and Hermon, Haim. Lithography process for patterning HgI2 photonic devices. United States: N. p., 2004.
Web.
Mescher, Mark J., James, Ralph B., & Hermon, Haim. Lithography process for patterning HgI2 photonic devices. United States.
Mescher, Mark J., James, Ralph B., and Hermon, Haim. Tue .
"Lithography process for patterning HgI2 photonic devices". United States. https://www.osti.gov/servlets/purl/1175146.
@article{osti_1175146,
title = {Lithography process for patterning HgI2 photonic devices},
author = {Mescher, Mark J. and James, Ralph B. and Hermon, Haim},
abstractNote = {A photolithographic process forms patterns on HgI.sub.2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI.sub.2 surfaces and for producing trenches in HgI.sub.2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {11}
}
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