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Title: Isoelectronic co-doping

Abstract

Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

Inventors:
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175125
Patent Number(s):
6815736
Application Number:
09/841,691
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Mascarenhas, Angelo. Isoelectronic co-doping. United States: N. p., 2004. Web.
Mascarenhas, Angelo. Isoelectronic co-doping. United States.
Mascarenhas, Angelo. Tue . "Isoelectronic co-doping". United States. https://www.osti.gov/servlets/purl/1175125.
@article{osti_1175125,
title = {Isoelectronic co-doping},
author = {Mascarenhas, Angelo},
abstractNote = {Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {11}
}

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Works referenced in this record:

Doping of group III nitrides
journal, May 1998

  • Ploog, Klaus H.; Brandt, Oliver
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 3, p. 1609-1614
  • https://doi.org/10.1116/1.581128

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High p‐type conductivity in cubic GaN/GaAs(113) A by using Be as the acceptor and O as the codopant
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Molecular doping of gallium nitride
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Role of Cl or I Codoping in Li-Doping Enhancement in ZnSe
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Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
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Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO
journal, February 1999


Ion Beam Annealing of Si Co-Implanted with Ga and As
journal, January 1989


New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
journal, November 1998


Luminescence due to the Isoelectronic Substitution of Bismuth for Phosphorus in Gallium Phosphide
journal, July 1966