Isoelectronic co-doping
Abstract
Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175125
- Patent Number(s):
- 6815736
- Application Number:
- 09/841,691
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Mascarenhas, Angelo. Isoelectronic co-doping. United States: N. p., 2004.
Web.
Mascarenhas, Angelo. Isoelectronic co-doping. United States.
Mascarenhas, Angelo. Tue .
"Isoelectronic co-doping". United States. https://www.osti.gov/servlets/purl/1175125.
@article{osti_1175125,
title = {Isoelectronic co-doping},
author = {Mascarenhas, Angelo},
abstractNote = {Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 09 00:00:00 EST 2004},
month = {Tue Nov 09 00:00:00 EST 2004}
}
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Works referenced in this record:
Doping of group III nitrides
journal, May 1998
- Ploog, Klaus H.; Brandt, Oliver
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 3, p. 1609-1614
Ion‐beam synthesis and stability of GaAs nanocrystals in silicon
journal, April 1996
- White, C. W.; Budai, J. D.; Zhu, J. G.
- Applied Physics Letters, Vol. 68, Issue 17, p. 2389-2391
High p‐type conductivity in cubic GaN/GaAs(113) A by using Be as the acceptor and O as the codopant
journal, October 1996
- Brandt, Oliver; Yang, Hui; Kostial, Helmar
- Applied Physics Letters, Vol. 69, Issue 18, p. 2707-2709
Molecular doping of gallium nitride
journal, January 1999
- Pankove, J. I.; Torvik, J. T.; Qiu, C.-H.
- Applied Physics Letters, Vol. 74, Issue 3, p. 416-418
Role of Cl or I Codoping in Li-Doping Enhancement in ZnSe
journal, August 1998
- Yamamoto, Tetsuya; Katayama, Hiroshi
- Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 8A
Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO
journal, February 1999
- Yamamoto, Tetsuya; Katayama, Hiroshi
- Japanese Journal of Applied Physics, Vol. 38, Issue Part 2, No. 2B
Ion Beam Annealing of Si Co-Implanted with Ga and As
journal, January 1989
- Withrow, S. P.; Holland, O. W.; Pennycook, S. J.
- MRS Proceedings, Vol. 157
New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
journal, November 1998
- Oe, Kunishige; Okamoto, Hiroshi
- Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 11A
Luminescence due to the Isoelectronic Substitution of Bismuth for Phosphorus in Gallium Phosphide
journal, July 1966
- Trumbore, F. A.; Gershenzon, M.; Thomas, D. G.
- Applied Physics Letters, Vol. 9, Issue 1