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Title: Method for nanomachining high aspect ratio structures

Abstract

A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175124
Patent Number(s):
6815363
Application Number:
09/927,428
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yun, Wenbing, Spence, John, Padmore, Howard A., MacDowell, Alastair A., and Howells, Malcolm R. Method for nanomachining high aspect ratio structures. United States: N. p., 2004. Web.
Yun, Wenbing, Spence, John, Padmore, Howard A., MacDowell, Alastair A., & Howells, Malcolm R. Method for nanomachining high aspect ratio structures. United States.
Yun, Wenbing, Spence, John, Padmore, Howard A., MacDowell, Alastair A., and Howells, Malcolm R. Tue . "Method for nanomachining high aspect ratio structures". United States. https://www.osti.gov/servlets/purl/1175124.
@article{osti_1175124,
title = {Method for nanomachining high aspect ratio structures},
author = {Yun, Wenbing and Spence, John and Padmore, Howard A. and MacDowell, Alastair A. and Howells, Malcolm R.},
abstractNote = {A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {11}
}

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Works referenced in this record:

Efficient high-order diffraction of extreme-ultraviolet light and soft x-rays by nanostructured volume gratings
journal, January 2001


Zone plates with high efficiency in high orders of diffraction described by dynamical theory
journal, October 1997


Chemical Etching of Charged‐Particle Tracks in Solids
journal, December 1962


Etching of Submicron Pores in Irradiated Mica
journal, March 1970