Metal-assisted chemical etch porous silicon formation method
Abstract
A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175032
- Patent Number(s):
- 6790785
- Application Number:
- 09/662,682
- Assignee:
- The Board of Trustees of the University of Illinois (Urbana, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-91-ER-45439
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Li, Xiuling, Bohn, Paul W., and Sweedler, Jonathan V. Metal-assisted chemical etch porous silicon formation method. United States: N. p., 2004.
Web.
Li, Xiuling, Bohn, Paul W., & Sweedler, Jonathan V. Metal-assisted chemical etch porous silicon formation method. United States.
Li, Xiuling, Bohn, Paul W., and Sweedler, Jonathan V. Tue .
"Metal-assisted chemical etch porous silicon formation method". United States. https://www.osti.gov/servlets/purl/1175032.
@article{osti_1175032,
title = {Metal-assisted chemical etch porous silicon formation method},
author = {Li, Xiuling and Bohn, Paul W. and Sweedler, Jonathan V.},
abstractNote = {A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 14 00:00:00 EDT 2004},
month = {Tue Sep 14 00:00:00 EDT 2004}
}
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