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Title: Metal-assisted chemical etch porous silicon formation method

Abstract

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Inventors:
; ;
Issue Date:
Research Org.:
Univ. of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175032
Patent Number(s):
6790785
Application Number:
09/662,682
Assignee:
The Board of Trustees of the University of Illinois (Urbana, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-91-ER-45439
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Li, Xiuling, Bohn, Paul W., and Sweedler, Jonathan V. Metal-assisted chemical etch porous silicon formation method. United States: N. p., 2004. Web.
Li, Xiuling, Bohn, Paul W., & Sweedler, Jonathan V. Metal-assisted chemical etch porous silicon formation method. United States.
Li, Xiuling, Bohn, Paul W., and Sweedler, Jonathan V. Tue . "Metal-assisted chemical etch porous silicon formation method". United States. https://www.osti.gov/servlets/purl/1175032.
@article{osti_1175032,
title = {Metal-assisted chemical etch porous silicon formation method},
author = {Li, Xiuling and Bohn, Paul W. and Sweedler, Jonathan V.},
abstractNote = {A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {9}
}

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Works referenced in this record:

Chemical etching of porous silicon in diluted hydrofluoric acid
journal, December 1998


A role of illumination during etching to porous silicon oxidation
journal, August 1999


Effects of Wet Etching on Photoluminescence of Porous Silicon
journal, January 2000


Preparation of thin porous silicon layers by stain etching
journal, April 1997