Method of preparing nitrogen containing semiconductor material
Abstract
A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175017
- Patent Number(s):
- 6787385
- Application Number:
- 10/344,380
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Barber, Greg D., and Kurtz, Sarah R. Method of preparing nitrogen containing semiconductor material. United States: N. p., 2004.
Web.
Barber, Greg D., & Kurtz, Sarah R. Method of preparing nitrogen containing semiconductor material. United States.
Barber, Greg D., and Kurtz, Sarah R. Tue .
"Method of preparing nitrogen containing semiconductor material". United States. https://www.osti.gov/servlets/purl/1175017.
@article{osti_1175017,
title = {Method of preparing nitrogen containing semiconductor material},
author = {Barber, Greg D. and Kurtz, Sarah R.},
abstractNote = {A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {9}
}
Works referenced in this record:
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
journal, February 1996
- Kondow, Masahiko; Uomi, Kazuhisa; Niwa, Atsuko
- Japanese Journal of Applied Physics, Vol. 35, Issue Part 1, No. 2B
Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
journal, July 1996
- Kondow, M.; Uomi, K.; Kitatani, T.
- Journal of Crystal Growth, Vol. 164, Issue 1-4, p. 175-179
Hydrogen and carbon incorporation in GaInNAs
journal, December 2000
- Moto, A.; Takahashi, M.; Takagishi, S.
- Journal of Crystal Growth, Vol. 221, Issue 1-4
Preparation of Nitrogen-Doped ZnSe Thin Films by Radical-Assisted MOCVD
journal, January 1998
- Hara, Yoshinori; Yonekura, Hiroshi; Noda, Yasutoshi
- Materials Transactions, JIM, Vol. 39, Issue 3