Method of preparing nitrogen containing semiconductor material

Title: Method of preparing nitrogen containing semiconductor material

Abstract

A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

Inventors:: Barber, Greg D.; Kurtz, Sarah R.

Issue Date:: 2004-09-07

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175017

Patent Number(s):: 6787385

Application Number:: 10/344,380

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02395 - {Arsenides}
H01L21/0237 - {Materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/406 - {Gallium nitride}
C30B25/02 - Epitaxial-layer growth

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02546 - {Arsenides}
H01L21/02573 - {Conductivity type}
H01L31/1844 - {comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02538 - {Group 13/15 materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/403 - {AIII-nitrides}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0254 - {Nitrides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}

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DOE Contract Number:: AC36-99GO10337

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Barber, Greg D., and Kurtz, Sarah R. Method of preparing nitrogen containing semiconductor material.  United States: N. p., 2004. 
        Web.

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                    Barber, Greg D., & Kurtz, Sarah R. Method of preparing nitrogen containing semiconductor material.  United States.

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                    Barber, Greg D., and Kurtz, Sarah R. Tue .  
        "Method of preparing nitrogen containing semiconductor material".  United States.  https://www.osti.gov/servlets/purl/1175017.

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@article{osti_1175017,

  title        = {Method of preparing nitrogen containing semiconductor material},

  author       = {Barber, Greg D. and Kurtz, Sarah R.},

  abstractNote = {A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2004},

  month        = {9}

}

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Works referenced in this record:

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
journal, February 1996

Kondow, Masahiko; Uomi, Kazuhisa; Niwa, Atsuko
Japanese Journal of Applied Physics, Vol. 35, Issue Part 1, No. 2B
https://doi.org/10.1143/JJAP.35.1273

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
journal, July 1996

Kondow, M.; Uomi, K.; Kitatani, T.
Journal of Crystal Growth, Vol. 164, Issue 1-4, p. 175-179
https://doi.org/10.1016/0022-0248(96)00008-5

Hydrogen and carbon incorporation in GaInNAs
journal, December 2000

Moto, A.; Takahashi, M.; Takagishi, S.
Journal of Crystal Growth, Vol. 221, Issue 1-4
https://doi.org/10.1016/S0022-0248(00)00749-1

Preparation of Nitrogen-Doped ZnSe Thin Films by Radical-Assisted MOCVD
journal, January 1998

Hara, Yoshinori; Yonekura, Hiroshi; Noda, Yasutoshi
Materials Transactions, JIM, Vol. 39, Issue 3
https://doi.org/10.2320/matertrans1989.39.427

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Similar Records

Title: Method of preparing nitrogen containing semiconductor material

Abstract

Citation Formats

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance journal, February 1996

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy journal, July 1996

Hydrogen and carbon incorporation in GaInNAs journal, December 2000

Preparation of Nitrogen-Doped ZnSe Thin Films by Radical-Assisted MOCVD journal, January 1998

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
journal, February 1996

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
journal, July 1996

Hydrogen and carbon incorporation in GaInNAs
journal, December 2000

Preparation of Nitrogen-Doped ZnSe Thin Films by Radical-Assisted MOCVD
journal, January 1998