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Title: Method of preparing nitrogen containing semiconductor material

Abstract

A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

Inventors:
;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175017
Patent Number(s):
6787385
Application Number:
10/344,380
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Barber, Greg D., and Kurtz, Sarah R. Method of preparing nitrogen containing semiconductor material. United States: N. p., 2004. Web.
Barber, Greg D., & Kurtz, Sarah R. Method of preparing nitrogen containing semiconductor material. United States.
Barber, Greg D., and Kurtz, Sarah R. Tue . "Method of preparing nitrogen containing semiconductor material". United States. https://www.osti.gov/servlets/purl/1175017.
@article{osti_1175017,
title = {Method of preparing nitrogen containing semiconductor material},
author = {Barber, Greg D. and Kurtz, Sarah R.},
abstractNote = {A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {9}
}

Patent:

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Works referenced in this record:

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
journal, February 1996


Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
journal, July 1996


Hydrogen and carbon incorporation in GaInNAs
journal, December 2000


Preparation of Nitrogen-Doped ZnSe Thin Films by Radical-Assisted MOCVD
journal, January 1998