Amorphous silicon photovoltaic devices

Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

Title: Amorphous silicon photovoltaic devices

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Abstract

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

Inventors:: Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

Issue Date:: 2004-08-31

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175007

Patent Number(s):: 6784361

Application Number:: 09/957,353

Assignee:: BP Corporation North America Inc. (Warrenville, IL)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02B - CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/076 - Multiple junction or tandem solar cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02B - CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
Y02B10/10 - Photovoltaic [PV]

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/075 - the potential barriers being only of the PIN type

B - PERFORMING OPERATIONS B32 - LAYERED PRODUCTS B32B - LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
B32B17/10036 - {comprising two outer glass sheet}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/206 - {Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

H - ELECTRICITY H02 - GENERATION H02S - GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
H02S20/23 - specially adapted for roof structures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/202 - {including only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/548 - Amorphous silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/204 - {including AIVBIV alloys, e.g. SiGe, SiC}

B - PERFORMING OPERATIONS B32 - LAYERED PRODUCTS B32B - LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
B32B17/10788 - {containing ethylene vinylacetate}

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DOE Contract Number:: AC36-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Carlson, David E., Lin, Guang H., and Ganguly, Gautam. Amorphous silicon photovoltaic devices.  United States: N. p., 2004. 
        Web.

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                    Carlson, David E., Lin, Guang H., & Ganguly, Gautam. Amorphous silicon photovoltaic devices.  United States.

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                    Carlson, David E., Lin, Guang H., and Ganguly, Gautam. Tue .  
        "Amorphous silicon photovoltaic devices".  United States.  https://www.osti.gov/servlets/purl/1175007.

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@article{osti_1175007,

  title        = {Amorphous silicon photovoltaic devices},

  author       = {Carlson, David E. and Lin, Guang H. and Ganguly, Gautam},

  abstractNote = {This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2004},

  month        = {8}

}

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