Conductive and robust nitride buffer layers on biaxially textured substrates
Abstract
The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1175005
- Patent Number(s):
- 6784139
- Application Number:
- 09/895,866
- Assignee:
- Applied Thin Films, Inc. (Evanston, IL)
- DOE Contract Number:
- ACO5-00OR22725
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Sankar, Sambasivan, Goyal, Amit, Barnett, Scott A., Kim, Ilwon, and Kroeger, Donald M. Conductive and robust nitride buffer layers on biaxially textured substrates. United States: N. p., 2004.
Web.
Sankar, Sambasivan, Goyal, Amit, Barnett, Scott A., Kim, Ilwon, & Kroeger, Donald M. Conductive and robust nitride buffer layers on biaxially textured substrates. United States.
Sankar, Sambasivan, Goyal, Amit, Barnett, Scott A., Kim, Ilwon, and Kroeger, Donald M. Tue .
"Conductive and robust nitride buffer layers on biaxially textured substrates". United States. https://www.osti.gov/servlets/purl/1175005.
@article{osti_1175005,
title = {Conductive and robust nitride buffer layers on biaxially textured substrates},
author = {Sankar, Sambasivan and Goyal, Amit and Barnett, Scott A. and Kim, Ilwon and Kroeger, Donald M.},
abstractNote = {The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 31 00:00:00 EDT 2004},
month = {Tue Aug 31 00:00:00 EDT 2004}
}
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Works referenced in this record:
Enhancement in critical current density of Y 1 Ba 2 Cu 3 O 7−δ thin films on hastelloy with TiN buffer layers
journal, August 1992
- Kumar, Ashok; Narayan, J.; Chen, X.
- Applied Physics Letters, Vol. 61, Issue 8