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Title: Distributed bragg reflector using AIGaN/GaN

Abstract

A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174984
Patent Number(s):
6775314
Application Number:
09/998,114
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Waldrip, Karen E., Lee, Stephen R., and Han, Jung. Distributed bragg reflector using AIGaN/GaN. United States: N. p., 2004. Web.
Waldrip, Karen E., Lee, Stephen R., & Han, Jung. Distributed bragg reflector using AIGaN/GaN. United States.
Waldrip, Karen E., Lee, Stephen R., and Han, Jung. Tue . "Distributed bragg reflector using AIGaN/GaN". United States. https://www.osti.gov/servlets/purl/1174984.
@article{osti_1174984,
title = {Distributed bragg reflector using AIGaN/GaN},
author = {Waldrip, Karen E. and Lee, Stephen R. and Han, Jung},
abstractNote = {A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {8}
}

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Works referenced in this record:

Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition
journal, December 1998


Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
journal, May 2001


High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy
journal, June 1999


Near ultraviolet optically pumped vertical cavity laser
journal, January 2000


High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy
journal, May 2000


Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
journal, January 1999


Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser
journal, August 1999


Study of high quality GaN grown by OMVPE using an intermediate layer
journal, September 2000