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Title: Poole-frenkel piezoconductive element and sensor

Abstract

A new class of highly sensitive piezoconductive strain sensor elements and sensors has been invented. The new elements function under conditions such that electrical conductivity is dominated by Poole-Frenkel transport. A substantial piezoconductive effect appears in this regime, allowing the new sensors to exhibit sensitivity to applied strain as much as two orders of magnitude in excess of prior art sensors based on doped silicon.

Inventors:
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174970
Patent Number(s):
6771083
Application Number:
10/101,450
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01D - MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE
G - PHYSICS G01 - MEASURING G01L - MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Habermehl, Scott D. Poole-frenkel piezoconductive element and sensor. United States: N. p., 2004. Web.
Habermehl, Scott D. Poole-frenkel piezoconductive element and sensor. United States.
Habermehl, Scott D. Tue . "Poole-frenkel piezoconductive element and sensor". United States. https://www.osti.gov/servlets/purl/1174970.
@article{osti_1174970,
title = {Poole-frenkel piezoconductive element and sensor},
author = {Habermehl, Scott D.},
abstractNote = {A new class of highly sensitive piezoconductive strain sensor elements and sensors has been invented. The new elements function under conditions such that electrical conductivity is dominated by Poole-Frenkel transport. A substantial piezoconductive effect appears in this regime, allowing the new sensors to exhibit sensitivity to applied strain as much as two orders of magnitude in excess of prior art sensors based on doped silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {8}
}

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Works referenced in this record:

Characterization of tantalum oxynitride thin films as high-temperature strain gauges
journal, January 1995