Npn double heterostructure bipolar transistor with ingaasn base region
Abstract
An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174958
- Patent Number(s):
- 6765242
- Application Number:
- 09/547,152
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Chang, Ping-Chih, Baca, Albert G., Li, Nein-Yi, Hou, Hong Q., and Ashby, Carol I. H. Npn double heterostructure bipolar transistor with ingaasn base region. United States: N. p., 2004.
Web.
Chang, Ping-Chih, Baca, Albert G., Li, Nein-Yi, Hou, Hong Q., & Ashby, Carol I. H. Npn double heterostructure bipolar transistor with ingaasn base region. United States.
Chang, Ping-Chih, Baca, Albert G., Li, Nein-Yi, Hou, Hong Q., and Ashby, Carol I. H. Tue .
"Npn double heterostructure bipolar transistor with ingaasn base region". United States. https://www.osti.gov/servlets/purl/1174958.
@article{osti_1174958,
title = {Npn double heterostructure bipolar transistor with ingaasn base region},
author = {Chang, Ping-Chih and Baca, Albert G. and Li, Nein-Yi and Hou, Hong Q. and Ashby, Carol I. H.},
abstractNote = {An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {7}
}
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