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Title: Npn double heterostructure bipolar transistor with ingaasn base region

Abstract

An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174958
Patent Number(s):
6765242
Application Number:
09/547,152
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Chang, Ping-Chih, Baca, Albert G., Li, Nein-Yi, Hou, Hong Q., and Ashby, Carol I. H.. Npn double heterostructure bipolar transistor with ingaasn base region. United States: N. p., 2004. Web.
Chang, Ping-Chih, Baca, Albert G., Li, Nein-Yi, Hou, Hong Q., & Ashby, Carol I. H.. Npn double heterostructure bipolar transistor with ingaasn base region. United States.
Chang, Ping-Chih, Baca, Albert G., Li, Nein-Yi, Hou, Hong Q., and Ashby, Carol I. H.. Tue . "Npn double heterostructure bipolar transistor with ingaasn base region". United States. https://www.osti.gov/servlets/purl/1174958.
@article{osti_1174958,
title = {Npn double heterostructure bipolar transistor with ingaasn base region},
author = {Chang, Ping-Chih and Baca, Albert G. and Li, Nein-Yi and Hou, Hong Q. and Ashby, Carol I. H.},
abstractNote = {An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {7}
}

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Works referenced in this record:

Annealing behavior of p -type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy
journal, September 1999


Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities
journal, January 2000


GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
journal, February 1996


DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs
journal, January 2000