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Title: Buffer layers and articles for electronic devices

Abstract

Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174955
Patent Number(s):
6764770
Application Number:
10/324,883
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Paranthaman, Mariappan P., Aytug, Tolga, Christen, David K., Feenstra, Roeland, and Goyal, Amit. Buffer layers and articles for electronic devices. United States: N. p., 2004. Web.
Paranthaman, Mariappan P., Aytug, Tolga, Christen, David K., Feenstra, Roeland, & Goyal, Amit. Buffer layers and articles for electronic devices. United States.
Paranthaman, Mariappan P., Aytug, Tolga, Christen, David K., Feenstra, Roeland, and Goyal, Amit. Tue . "Buffer layers and articles for electronic devices". United States. https://www.osti.gov/servlets/purl/1174955.
@article{osti_1174955,
title = {Buffer layers and articles for electronic devices},
author = {Paranthaman, Mariappan P. and Aytug, Tolga and Christen, David K. and Feenstra, Roeland and Goyal, Amit},
abstractNote = {Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {7}
}

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Works referenced in this record:

Anomalous Magnetotransport Properties of Pr 1- x Ca x MnO 3
journal, October 1995


Material characteristics of perovskite manganese oxide thin films for bolometric applications
journal, October 1997