Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors
Abstract
Non-alloyed, low resistivity contacts for semiconductors using Group III-V and Group II-VI compounds and methods of making are disclosed. Co-implantation techniques are disclosed.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174933
- Patent Number(s):
- 6759312
- Assignee:
- University Of California, The Regents Of
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Walukiewicz, Wladyslaw, and Yu, Kin M. Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors. United States: N. p., 2004.
Web.
Walukiewicz, Wladyslaw, & Yu, Kin M. Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors. United States.
Walukiewicz, Wladyslaw, and Yu, Kin M. Tue .
"Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors". United States. https://www.osti.gov/servlets/purl/1174933.
@article{osti_1174933,
title = {Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors},
author = {Walukiewicz, Wladyslaw and Yu, Kin M.},
abstractNote = {Non-alloyed, low resistivity contacts for semiconductors using Group III-V and Group II-VI compounds and methods of making are disclosed. Co-implantation techniques are disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {7}
}
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