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Title: Method for providing an arbitrary three-dimensional microstructure in silicon using an anisotropic deep etch

Abstract

The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174898
Patent Number(s):
6749997
Application Number:
10/146,421
Assignee:
Sandia National Laboratories (Livermore, CA)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Morales, Alfredo M., and Gonzales, Marcela. Method for providing an arbitrary three-dimensional microstructure in silicon using an anisotropic deep etch. United States: N. p., 2004. Web.
Morales, Alfredo M., & Gonzales, Marcela. Method for providing an arbitrary three-dimensional microstructure in silicon using an anisotropic deep etch. United States.
Morales, Alfredo M., and Gonzales, Marcela. Tue . "Method for providing an arbitrary three-dimensional microstructure in silicon using an anisotropic deep etch". United States. https://www.osti.gov/servlets/purl/1174898.
@article{osti_1174898,
title = {Method for providing an arbitrary three-dimensional microstructure in silicon using an anisotropic deep etch},
author = {Morales, Alfredo M. and Gonzales, Marcela},
abstractNote = {The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {6}
}

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