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Title: Photoelectron linear accelerator for producing a low emittance polarized electron beam

Abstract

A photoelectron linear accelerator for producing a low emittance polarized electric beam. The accelerator includes a tube having an inner wall, the inner tube wall being coated by a getter material. A portable, or demountable, cathode plug is mounted within said tube, the surface of said cathode having a semiconductor material formed thereon.

Inventors:
; ;
Issue Date:
Research Org.:
Duly Research Inc., Rancho Palos Verdes, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174875
Patent Number(s):
6744226
Application Number:
10/261,831
Assignee:
Duly Research Inc. (Rancho Palos Verdes, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05H - PLASMA TECHNIQUE
DOE Contract Number:  
FG03-02ER83401
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS

Citation Formats

Yu, David U., Clendenin, James E., and Kirby, Robert E. Photoelectron linear accelerator for producing a low emittance polarized electron beam. United States: N. p., 2004. Web.
Yu, David U., Clendenin, James E., & Kirby, Robert E. Photoelectron linear accelerator for producing a low emittance polarized electron beam. United States.
Yu, David U., Clendenin, James E., and Kirby, Robert E. Tue . "Photoelectron linear accelerator for producing a low emittance polarized electron beam". United States. https://www.osti.gov/servlets/purl/1174875.
@article{osti_1174875,
title = {Photoelectron linear accelerator for producing a low emittance polarized electron beam},
author = {Yu, David U. and Clendenin, James E. and Kirby, Robert E.},
abstractNote = {A photoelectron linear accelerator for producing a low emittance polarized electric beam. The accelerator includes a tube having an inner wall, the inner tube wall being coated by a getter material. A portable, or demountable, cathode plug is mounted within said tube, the surface of said cathode having a semiconductor material formed thereon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {6}
}

Patent: