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Title: Buffer architecture for biaxially textured structures and method of fabricating same

Abstract

The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO.sub.2 and/or HfO.sub.2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO.sub.2 and HfO.sub.2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1.times.10.sup.-5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffermore » layer and the superconducting layer.« less

Inventors:
; ;
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174801
Patent Number(s):
6716795
Application Number:
09/406,190
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
C - CHEMISTRY C21 - METALLURGY OF IRON C21D - MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Norton, David P., Park, Chan, and Goyal, Amit. Buffer architecture for biaxially textured structures and method of fabricating same. United States: N. p., 2004. Web.
Norton, David P., Park, Chan, & Goyal, Amit. Buffer architecture for biaxially textured structures and method of fabricating same. United States.
Norton, David P., Park, Chan, and Goyal, Amit. Tue . "Buffer architecture for biaxially textured structures and method of fabricating same". United States. https://www.osti.gov/servlets/purl/1174801.
@article{osti_1174801,
title = {Buffer architecture for biaxially textured structures and method of fabricating same},
author = {Norton, David P. and Park, Chan and Goyal, Amit},
abstractNote = {The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO.sub.2 and/or HfO.sub.2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO.sub.2 and HfO.sub.2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1.times.10.sup.-5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {4}
}

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Works referenced in this record:

Pulsed laser deposition of thick YBa 2 Cu 3 O 7−δ films with J c ≥1 MA/cm 2
journal, September 1993


Growth of YBa2Cu3O7-crystals with BaZrO3-coated alumina crucibles
journal, June 1998


Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation
journal, February 1997


Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation
journal, February 1997


In‐plane aligned YBa 2 Cu 3 O 7− x thin films deposited on polycrystalline metallic substrates
journal, February 1992