Junction-side illuminated silicon detector arrays
Abstract
A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.
- Inventors:
- Issue Date:
- Research Org.:
- Photon Imaging, Inc., Northridge, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174792
- Patent Number(s):
- 6713768
- Application Number:
- 09/835,937
- Assignee:
- Photon Imaging, Inc. (Northridge, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG03-99ER82854
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Citation Formats
Iwanczyk, Jan S., Patt, Bradley E., and Tull, Carolyn. Junction-side illuminated silicon detector arrays. United States: N. p., 2004.
Web.
Iwanczyk, Jan S., Patt, Bradley E., & Tull, Carolyn. Junction-side illuminated silicon detector arrays. United States.
Iwanczyk, Jan S., Patt, Bradley E., and Tull, Carolyn. Tue .
"Junction-side illuminated silicon detector arrays". United States. https://www.osti.gov/servlets/purl/1174792.
@article{osti_1174792,
title = {Junction-side illuminated silicon detector arrays},
author = {Iwanczyk, Jan S. and Patt, Bradley E. and Tull, Carolyn},
abstractNote = {A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 30 00:00:00 EST 2004},
month = {Tue Mar 30 00:00:00 EST 2004}
}
Works referenced in this record:
Development of low noise, back-side illuminated silicon photodiode arrays
journal, June 1997
- Holland, S. E.; Wang, N. W.; Moses, W. W.
- IEEE Transactions on Nuclear Science, Vol. 44, Issue 3