Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication

Farino, Anthony J.

Title: Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication

Full Record
Other Related Research

Abstract

A method for reconditioning the surface of a semiconductor substrate to remove an unwanted (i.e. defective) layer of photoresist is disclosed. The method adapts a conventional automated spinner which is used to rotate the substrate at high speed while a stream of a first solvent (e.g. acetone) is used to dissolve the photoresist. A stream of a second solvent (e.g. methanol) is then used to clean the substrate at a lower speed, with the substrate being allowed to dry with continued rotation. The method of the present invention can be used within a photolithography track so that the substrates need never leave the track for reconditioning.

Inventors:: Farino, Anthony J.

Issue Date:: 2004-01-27

Research Org.:: Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1174699

Patent Number(s):: 6682607

Application Number:: 10/092,215

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B08 - CLEANING B08B - CLEANING IN GENERAL

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

B - PERFORMING OPERATIONS B08 - CLEANING B08B - CLEANING IN GENERAL
B08B3/02 - Cleaning by the force of jets or sprays

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/6708 - {using mainly spraying means, e.g. nozzles}

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F7/3021 - {from a wafer supported on a rotating chuck}
G03F7/422 - {using liquids only

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/67028 - {for cleaning followed by drying, rinsing, stripping, blasting or the like}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S134/902 - Semiconductor wafer

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/31133 - {by chemical means}

Show less

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Farino, Anthony J. Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication.  United States: N. p., 2004. 
        Web.

Copy to clipboard


                    Farino, Anthony J. Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication.  United States.

Copy to clipboard


                    Farino, Anthony J. Tue .  
        "Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication".  United States.  https://www.osti.gov/servlets/purl/1174699.

Copy to clipboard


                    
@article{osti_1174699,

  title        = {Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication},

  author       = {Farino, Anthony J.},

  abstractNote = {A method for reconditioning the surface of a semiconductor substrate to remove an unwanted (i.e. defective) layer of photoresist is disclosed. The method adapts a conventional automated spinner which is used to rotate the substrate at high speed while a stream of a first solvent (e.g. acetone) is used to dissolve the photoresist. A stream of a second solvent (e.g. methanol) is then used to clean the substrate at a lower speed, with the substrate being allowed to dry with continued rotation. The method of the present invention can be used within a photolithography track so that the substrates need never leave the track for reconditioning.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2004},

  month        = {1}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

Patent Sherohman, John W [Livermore, CA]; Coombs, III, Arthur W. (Patterson, CA); Yee, Jick Hong [Livermore, CA]; ...

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.
Full Text Available
Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

Patent Sopori, Bhushan

Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.
Full Text Available
Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

Patent Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; ...

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatusmore » are also disclosed. « less
Full Text Available
Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

Patent Sopori, Bhushan; Rangappan, Anikara

Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.
Full Text Available
Method for removing semiconductor layers from salt substrates

Patent Shuskus, Alexander J [West Hartford, CT]; Cowher, Melvyn E [East Brookfield, MA]

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.
Full Text Available

Similar Records