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Title: Method of depositing epitaxial layers on a substrate

Abstract

An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

Inventors:
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174656
Patent Number(s):
6670308
Application Number:
10/101,218
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Goyal, Amit. Method of depositing epitaxial layers on a substrate. United States: N. p., 2003. Web.
Goyal, Amit. Method of depositing epitaxial layers on a substrate. United States.
Goyal, Amit. Tue . "Method of depositing epitaxial layers on a substrate". United States. https://www.osti.gov/servlets/purl/1174656.
@article{osti_1174656,
title = {Method of depositing epitaxial layers on a substrate},
author = {Goyal, Amit},
abstractNote = {An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {12}
}

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Works referenced in this record:

Transport superconducting properties of grain boundaries in Tl 1 Ba 2 Ca 2 Cu 3 O x thin films
journal, August 1994


Orientation Dependence of Grain-Boundary Critical Currents in Y Ba 2 Cu 3 O 7 δ Bicrystals
journal, July 1988


Weak link behavior of grain boundaries in Nd‐, Bi‐, and Tl‐based cuprate superconductors
journal, January 1993


High current YBa 2 Cu 3 O 7−δ thick films on flexible nickel substrates with textured buffer layers
journal, October 1994


High current YBa 2 Cu 3 O 7−δ thick films on flexible nickel substrates with textured buffer layers
journal, October 1994


Conductors with controlled grain boundaries: An approach to the next generation, high temperature superconducting wire
journal, November 1997


Electromagnetic coupling character of [001] twist boundaries in sintered Bi2Sr2CaCu2O8+x bicrystals
journal, September 1994


The Superconducting Properties of [001] Twist Boundaries in a Bi-Sr-Ca-Cu-O Superconductor
journal, July 1992


Transport characteristics of Tl 2 Ba 2 CaCu 2 O 8 bicrystal grain boundary junctions at 77 K
journal, January 1993


Superconducting transport properties of grain boundaries in YBa 2 Cu 3 O 7 bicrystals
journal, March 1990