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Title: Self-cleaning optic for extreme ultraviolet lithography

Abstract

A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174631
Patent Number(s):
6,664,554
Application Number:
09/754,869
Assignee:
EUV LLC (Santa Clara, CA) OSTI
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Klebanoff, Leonard E., and Stulen, Richard H. Self-cleaning optic for extreme ultraviolet lithography. United States: N. p., 2003. Web.
Klebanoff, Leonard E., & Stulen, Richard H. Self-cleaning optic for extreme ultraviolet lithography. United States.
Klebanoff, Leonard E., and Stulen, Richard H. Tue . "Self-cleaning optic for extreme ultraviolet lithography". United States. https://www.osti.gov/servlets/purl/1174631.
@article{osti_1174631,
title = {Self-cleaning optic for extreme ultraviolet lithography},
author = {Klebanoff, Leonard E. and Stulen, Richard H.},
abstractNote = {A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {12}
}

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