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Title: Tungsten-doped thin film materials

Abstract

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174612
Patent Number(s):
6660414
Application Number:
09/299,805
Assignee:
U.S. Department of Energy (Washington, DC)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL B01J - CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01G - COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Patent File Date: 1999 Apr 26
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xiang, Xiao-Dong, Chang, Hauyee, Gao, Chen, Takeuchi, Ichiro, and Schultz, Peter G. Tungsten-doped thin film materials. United States: N. p., 2003. Web.
Xiang, Xiao-Dong, Chang, Hauyee, Gao, Chen, Takeuchi, Ichiro, & Schultz, Peter G. Tungsten-doped thin film materials. United States.
Xiang, Xiao-Dong, Chang, Hauyee, Gao, Chen, Takeuchi, Ichiro, and Schultz, Peter G. Tue . "Tungsten-doped thin film materials". United States. https://www.osti.gov/servlets/purl/1174612.
@article{osti_1174612,
title = {Tungsten-doped thin film materials},
author = {Xiang, Xiao-Dong and Chang, Hauyee and Gao, Chen and Takeuchi, Ichiro and Schultz, Peter G.},
abstractNote = {A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {12}
}

Works referenced in this record:

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Identification and optimization of advanced phosphors using combinatorial libraries
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A Combinatorial Approach to Materials Discovery
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A Class of Cobalt Oxide Magnetoresistance Materials Discovered with Combinatorial Synthesis
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Comparative Study of Amorphous and Crystalline (Ba, Sr)TiO 3 Thin Films Deposited by Laser Ablation
journal, September 1993