Silicon on insulator self-aligned transistors
Abstract
A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174590
- Patent Number(s):
- 6649977
- Application Number:
- 08/526,339
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
McCarthy, Anthony M. Silicon on insulator self-aligned transistors. United States: N. p., 2003.
Web.
McCarthy, Anthony M. Silicon on insulator self-aligned transistors. United States.
McCarthy, Anthony M. Tue .
"Silicon on insulator self-aligned transistors". United States. https://www.osti.gov/servlets/purl/1174590.
@article{osti_1174590,
title = {Silicon on insulator self-aligned transistors},
author = {McCarthy, Anthony M.},
abstractNote = {A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 18 00:00:00 EST 2003},
month = {Tue Nov 18 00:00:00 EST 2003}
}
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