Thin film capillary process and apparatus
Abstract
Method and system of forming microfluidic capillaries in a variety of substrate materials. A first layer of a material such as silicon dioxide is applied to a channel etched in substrate. A second, sacrificial layer of a material such as a polymer is deposited on the first layer. A third layer which may be of the same material as the first layer is placed on the second layer. The sacrificial layer is removed to form a smooth walled capillary in the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California, Oakland, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174585
- Patent Number(s):
- 6649078
- Application Number:
- 09/732,004
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL B01L - CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81B - MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Yu, Conrad M. Thin film capillary process and apparatus. United States: N. p., 2003.
Web.
Yu, Conrad M. Thin film capillary process and apparatus. United States.
Yu, Conrad M. Tue .
"Thin film capillary process and apparatus". United States. https://www.osti.gov/servlets/purl/1174585.
@article{osti_1174585,
title = {Thin film capillary process and apparatus},
author = {Yu, Conrad M.},
abstractNote = {Method and system of forming microfluidic capillaries in a variety of substrate materials. A first layer of a material such as silicon dioxide is applied to a channel etched in substrate. A second, sacrificial layer of a material such as a polymer is deposited on the first layer. A third layer which may be of the same material as the first layer is placed on the second layer. The sacrificial layer is removed to form a smooth walled capillary in the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 18 00:00:00 EST 2003},
month = {Tue Nov 18 00:00:00 EST 2003}
}
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