Multicomponent homogeneous alloys and method for making same

Dutta, Partha S.; Miller, Thomas R.

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Title: Multicomponent homogeneous alloys and method for making same

Abstract

The present application discloses a method for preparing a homogeneous ternary or quaternary alloy from a quaternary melt. The method includes providing a family of phase diagrams for the quaternary melt which shows (i) composition/temperature data, (ii) tie lines connecting equilibrium liquid and solid compositions, and (iii) isotherms representing boundaries of a miscibility gap. Based on the family of phase diagrams, a quaternary melt composition and an alloy growth temperature is selected. A quaternary melt having the selected quaternary melt composition is provided and a ternary or quaternary alloy is grown from the quaternary melt at the selected alloy growth temperature. A method for making homogeneous ternary or quaternary alloy from a ternary or quaternary melt is also disclosed, as are homogeneous quaternary single-crystal alloys which are substantially free from crystal defects and which have the formula A.sub.x B.sub.1-x C.sub.y D.sub.1-y, x and y being the same or different and in the range of 0.001 to 0.999.

Inventors:: Dutta, Partha S.; Miller, Thomas R.

Issue Date:: 2003-09-02

Research Org.:: Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1174469

Patent Number(s):: 6613162

Application Number:: 09/696,626

Assignee:: Rensselaer Polytechnic Institute (Troy, NY)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B11/002 - {Crucibles or containers for supporting the melt}
C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}

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DOE Contract Number:: AC12-76SN3052

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Dutta, Partha S., and Miller, Thomas R. Multicomponent homogeneous alloys and method for making same.  United States: N. p., 2003. 
        Web.

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                    Dutta, Partha S., & Miller, Thomas R. Multicomponent homogeneous alloys and method for making same.  United States.

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                    Dutta, Partha S., and Miller, Thomas R. Tue .  
        "Multicomponent homogeneous alloys and method for making same".  United States.  https://www.osti.gov/servlets/purl/1174469.

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@article{osti_1174469,

  title        = {Multicomponent homogeneous alloys and method for making same},

  author       = {Dutta, Partha S. and Miller, Thomas R.},

  abstractNote = {The present application discloses a method for preparing a homogeneous ternary or quaternary alloy from a quaternary melt. The method includes providing a family of phase diagrams for the quaternary melt which shows (i) composition/temperature data, (ii) tie lines connecting equilibrium liquid and solid compositions, and (iii) isotherms representing boundaries of a miscibility gap. Based on the family of phase diagrams, a quaternary melt composition and an alloy growth temperature is selected. A quaternary melt having the selected quaternary melt composition is provided and a ternary or quaternary alloy is grown from the quaternary melt at the selected alloy growth temperature. A method for making homogeneous ternary or quaternary alloy from a ternary or quaternary melt is also disclosed, as are homogeneous quaternary single-crystal alloys which are substantially free from crystal defects and which have the formula A.sub.x B.sub.1-x C.sub.y D.sub.1-y, x and y being the same or different and in the range of 0.001 to 0.999.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2003},

  month        = {9}

}

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Works referenced in this record:

The solute-feeding Czochralski method for homogeneous GaInSb bulk alloy pulling
journal, January 1994

Tanaka, Akira; Watanabe, Akiyoshi; Kimura, Masakazu
Journal of Crystal Growth, Vol. 135, Issue 1-2
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Numerical simulation of single crystal growth by submerged heater method
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Ostrogorsky, Aleksandar G.
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The pseudoquaternary phase diagram of the Ga-In-As-Sb system
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Nakajima, Kazuo; Osamura, Kozo; Yasuda, Ken
Journal of Crystal Growth, Vol. 41, Issue 1
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Single crystalline bulk growth of In0.3Ga0.7As on GaAs seed using the multi-component zone melting method
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Kodama, Shigeo; Furumura, Yuji; Kinoshita, Kyoichi
Journal of Crystal Growth, Vol. 208, Issue 1-4
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Bridgman growth of compositionally graded InxGa1 − xAs (x = 0.05−0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth
journal, March 1997

Nakajima, Kazuo; Kusunoki, Toshihiro; Otsubo, Koji
Journal of Crystal Growth, Vol. 173, Issue 1-2
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Control of GaInSb alloy composition grown from ternary solution
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Tanaka, Akira; Yoneyama, Tsuyoshi; Kimura, Masakazu
Journal of Crystal Growth, Vol. 186, Issue 3
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Lattice parameters and optical characterization of Cd1−xMgxSe alloys grown by vertical gradient freezing technique
journal, May 1999

Miotkowski, I.; Vogelgesang, R.; Alawadhi, H.
Journal of Crystal Growth, Vol. 203, Issue 1-2
https://doi.org/10.1016/S0022-0248(99)00086-X

Melt growth of quasi-binary (GaSb)1−x(InAs)x crystals
journal, March 1999

Dutta, P. S.; Ostrogorsky, A. G.
Journal of Crystal Growth, Vol. 198-199
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The physics and technology of gallium antimonide: An emerging optoelectronic material
journal, May 1997

Dutta, P. S.; Bhat, H. L.; Kumar, Vikram
Journal of Applied Physics, Vol. 81, Issue 9
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Algebraic Representation of Thermodynamic Properties and the Classification of Solutions
journal, February 1948

Redlich, Otto; Kister, A. T.
Industrial & Engineering Chemistry, Vol. 40, Issue 2
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Directional solidification of InxGa1−xAs
journal, March 2000

Hashio, Katsushi; Tatsumi, Masami; Kato, Hirokazu
Journal of Crystal Growth, Vol. 210, Issue 4
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Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-Sb
journal, July 1969

Stringfellow, G. B.; Greene, P. E.
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Constant Temperature LEC Growth of Uniform Composition InGaAs Bulk Crystals through Continuous Supply of GaAs
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Nakajima, K.; Kusunoki, T.; Kuramata, K.
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Multicomponent zone melting growth of ternary InGaAs bulk crystal
journal, March 1996

Suzuki, T.; Nakajima, K.; Kusunoki, T.
Journal of Electronic Materials, Vol. 25, Issue 3
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An assessment of phase diagram and thermodynamic properties of the gallium-1ndium-antimony system
journal, April 1994

Yang, Jianrong; Watson, Andy
Calphad, Vol. 18, Issue 2
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Miscibility gaps in quaternary III/V alloys
journal, June 1982

Stringfellow, G. B.
Journal of Crystal Growth, Vol. 58, Issue 1
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InGaAsSb thermophotovoltaic diode: Physics evaluation
journal, February 1999

Charache, G. W.; Baldasaro, P. F.; Danielson, L. R.
Journal of Applied Physics, Vol. 85, Issue 4
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Multi-step pulling of GaInSb bulk crystal from ternary solution
journal, February 2000

Tanaka, Akira; Shintani, Jun; Kimura, Masakazu
Journal of Crystal Growth, Vol. 209, Issue 4
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A binary database for III–V compound semiconductor systems
journal, April 1994

Ansara, I.; Chatillon, C.; Lukas, H. L.
Calphad, Vol. 18, Issue 2
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InGaAs single crystal using a GaAs seed grown with the vertical gradient freeze technique
journal, March 1999

Nishijima, Yoshito; Nakajima, Kazuo; Otsubo, Koji
Journal of Crystal Growth, Vol. 197, Issue 4
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Ga-Al-As: Phase, thermodynamic and optical properties
journal, January 1969

Panish, M. B.; Sumski, S.
Journal of Physics and Chemistry of Solids, Vol. 30, Issue 1
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InGaAs single crystal with a uniform composition in the growth direction grown on an InGaAs seed using the multicomponent zone growth method
journal, January 2000

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Journal of Crystal Growth, Vol. 208, Issue 1-4
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Segregation reduction in vertical Bridgman crystal growth of CdZnTe
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Melt and solution growth of bulk single crystals of quaternary III–V alloys
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Calculation of ternary and quaternary III–V phase diagrams
journal, December 1974

Stringfellow, G. B.
Journal of Crystal Growth, Vol. 27
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Suppression of cracks in InxGa1−xSb crystals through forced convection in the melt
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Dutta, P. S.; Ostrogorsky, A. G.
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Similar Records

Title: Multicomponent homogeneous alloys and method for making same

Abstract

Citation Formats

The solute-feeding Czochralski method for homogeneous GaInSb bulk alloy pulling journal, January 1994

Numerical simulation of single crystal growth by submerged heater method journal, July 1990

The pseudoquaternary phase diagram of the Ga-In-As-Sb system journal, November 1977

Single crystalline bulk growth of In0.3Ga0.7As on GaAs seed using the multi-component zone melting method journal, January 2000

Bridgman growth of compositionally graded InxGa1 − xAs (x = 0.05−0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth journal, March 1997

Control of GaInSb alloy composition grown from ternary solution journal, March 1998

Lattice parameters and optical characterization of Cd1−xMgxSe alloys grown by vertical gradient freezing technique journal, May 1999

Melt growth of quasi-binary (GaSb)1−x(InAs)x crystals journal, March 1999

The physics and technology of gallium antimonide: An emerging optoelectronic material journal, May 1997

Algebraic Representation of Thermodynamic Properties and the Classification of Solutions journal, February 1948

Directional solidification of InxGa1−xAs journal, March 2000

Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-Sb journal, July 1969

Constant Temperature LEC Growth of Uniform Composition InGaAs Bulk Crystals through Continuous Supply of GaAs journal, January 1992

Multicomponent zone melting growth of ternary InGaAs bulk crystal journal, March 1996

An assessment of phase diagram and thermodynamic properties of the gallium-1ndium-antimony system journal, April 1994

Miscibility gaps in quaternary III/V alloys journal, June 1982

InGaAsSb thermophotovoltaic diode: Physics evaluation journal, February 1999

Multi-step pulling of GaInSb bulk crystal from ternary solution journal, February 2000

A binary database for III–V compound semiconductor systems journal, April 1994

InGaAs single crystal using a GaAs seed grown with the vertical gradient freeze technique journal, March 1999

Ga-Al-As: Phase, thermodynamic and optical properties journal, January 1969

InGaAs single crystal with a uniform composition in the growth direction grown on an InGaAs seed using the multicomponent zone growth method journal, January 2000

Segregation reduction in vertical Bridgman crystal growth of CdZnTe journal, November 1997

Melt and solution growth of bulk single crystals of quaternary III–V alloys journal, January 1979

Calculation of ternary and quaternary III–V phase diagrams journal, December 1974

Suppression of cracks in InxGa1−xSb crystals through forced convection in the melt journal, November 1998

The solute-feeding Czochralski method for homogeneous GaInSb bulk alloy pulling
journal, January 1994

Numerical simulation of single crystal growth by submerged heater method
journal, July 1990

The pseudoquaternary phase diagram of the Ga-In-As-Sb system
journal, November 1977

Single crystalline bulk growth of In0.3Ga0.7As on GaAs seed using the multi-component zone melting method
journal, January 2000

Bridgman growth of compositionally graded InxGa1 − xAs (x = 0.05−0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth
journal, March 1997

Control of GaInSb alloy composition grown from ternary solution
journal, March 1998

Lattice parameters and optical characterization of Cd1−xMgxSe alloys grown by vertical gradient freezing technique
journal, May 1999

Melt growth of quasi-binary (GaSb)1−x(InAs)x crystals
journal, March 1999

The physics and technology of gallium antimonide: An emerging optoelectronic material
journal, May 1997

Algebraic Representation of Thermodynamic Properties and the Classification of Solutions
journal, February 1948

Directional solidification of InxGa1−xAs
journal, March 2000

Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-Sb
journal, July 1969

Constant Temperature LEC Growth of Uniform Composition InGaAs Bulk Crystals through Continuous Supply of GaAs
journal, January 1992

Multicomponent zone melting growth of ternary InGaAs bulk crystal
journal, March 1996

An assessment of phase diagram and thermodynamic properties of the gallium-1ndium-antimony system
journal, April 1994

Miscibility gaps in quaternary III/V alloys
journal, June 1982

InGaAsSb thermophotovoltaic diode: Physics evaluation
journal, February 1999

Multi-step pulling of GaInSb bulk crystal from ternary solution
journal, February 2000

A binary database for III–V compound semiconductor systems
journal, April 1994

InGaAs single crystal using a GaAs seed grown with the vertical gradient freeze technique
journal, March 1999

Ga-Al-As: Phase, thermodynamic and optical properties
journal, January 1969

InGaAs single crystal with a uniform composition in the growth direction grown on an InGaAs seed using the multicomponent zone growth method
journal, January 2000

Segregation reduction in vertical Bridgman crystal growth of CdZnTe
journal, November 1997

Melt and solution growth of bulk single crystals of quaternary III–V alloys
journal, January 1979

Calculation of ternary and quaternary III–V phase diagrams
journal, December 1974

Suppression of cracks in InxGa1−xSb crystals through forced convection in the melt
journal, November 1998