Title: Cantilever epitaxial process

Abstract

A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.

Inventors:

Ashby, Carol I.; Follstaedt, David M.; Mitchell, Christine C.; Han, Jung

Issue Date:

2003-07-29

Research Org.:

Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1174418

Patent Number(s):

6599362

Application Number:

09/754,803

Assignee:

Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02439 - {Materials}
H01L21/0237 - {Materials}
H01L21/0265 - {Pendeoepitaxy}
H01L21/02587 - {Structure}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S2304/12 - Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0242 - {Crystalline insulating materials}
H01L21/02521 - {Materials}
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L21/0254 - {Nitrides}
H01L21/02458 - {Nitrides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE