Cantilever epitaxial process
Abstract
A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174418
- Patent Number(s):
- 6599362
- Application Number:
- 09/754,803
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Ashby, Carol I., Follstaedt, David M., Mitchell, Christine C., and Han, Jung. Cantilever epitaxial process. United States: N. p., 2003.
Web.
Ashby, Carol I., Follstaedt, David M., Mitchell, Christine C., & Han, Jung. Cantilever epitaxial process. United States.
Ashby, Carol I., Follstaedt, David M., Mitchell, Christine C., and Han, Jung. Tue .
"Cantilever epitaxial process". United States. https://www.osti.gov/servlets/purl/1174418.
@article{osti_1174418,
title = {Cantilever epitaxial process},
author = {Ashby, Carol I. and Follstaedt, David M. and Mitchell, Christine C. and Han, Jung},
abstractNote = {A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {7}
}
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Works referenced in this record:
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
journal, November 1997
- Nam, Ok-Hyun; Bremser, Michael D.; Zheleva, Tsvetanka S.
- Applied Physics Letters, Vol. 71, Issue 18
Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor
journal, November 1997
- Kongetira, Poonacha
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, Issue 6
The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition
journal, November 1997
- Han, J.; Ng, T. -B.; Biefeld, R. M.
- Applied Physics Letters, Vol. 71, Issue 21
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
journal, January 1998
- Marchand, H.; Ibbetson, J. P.; Fini, Paul T.
- MRS Internet Journal of Nitride Semiconductor Research, Vol. 3
Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
journal, January 1999
- Linthicum, K. J.; Gehrke, T.; Thomson, D. B.
- MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, Issue S1
Advanced Pendeoepitaxy™ of GaN and Al x Ga 1−x N Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
journal, January 1999
- Gehrke, T.; Linthicum, K. J.; Rajagopal, P.
- MRS Proceedings, Vol. 595
Growth and applications of Group III-nitrides
journal, October 1998
- Ambacher, O.
- Journal of Physics D: Applied Physics, Vol. 31, Issue 20
Anisotropic epitaxial lateral growth in GaN selective area epitaxy
journal, September 1997
- Kapolnek, D.; Keller, S.; Vetury, R.
- Applied Physics Letters, Vol. 71, Issue 9
Low-dislocation-density GaN from a single growth on a textured substrate
journal, November 2000
- Ashby, Carol I. H.; Mitchell, Christine C.; Han, Jung
- Applied Physics Letters, Vol. 77, Issue 20
Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures
journal, January 1999
- Zheleva, Tsvetanka S.; Smith, Scott A.; Thomson, Darren B.
- MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, Issue S1
Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
journal, January 1998
- Haffouz, S.; Beaumont, B.; Gibart, Pierre
- MRS Internet Journal of Nitride Semiconductor Research, Vol. 3