skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Cantilever epitaxial process

Abstract

A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174418
Patent Number(s):
6599362
Application Number:
09/754,803
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ashby, Carol I., Follstaedt, David M., Mitchell, Christine C., and Han, Jung. Cantilever epitaxial process. United States: N. p., 2003. Web.
Ashby, Carol I., Follstaedt, David M., Mitchell, Christine C., & Han, Jung. Cantilever epitaxial process. United States.
Ashby, Carol I., Follstaedt, David M., Mitchell, Christine C., and Han, Jung. Tue . "Cantilever epitaxial process". United States. https://www.osti.gov/servlets/purl/1174418.
@article{osti_1174418,
title = {Cantilever epitaxial process},
author = {Ashby, Carol I. and Follstaedt, David M. and Mitchell, Christine C. and Han, Jung},
abstractNote = {A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {7}
}

Patent:

Save / Share:

Works referenced in this record:

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
journal, November 1997


Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor
journal, November 1997


The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition
journal, November 1997


Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
journal, January 1998


Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
journal, January 1999


Growth and applications of Group III-nitrides
journal, October 1998


Anisotropic epitaxial lateral growth in GaN selective area epitaxy
journal, September 1997


Low-dislocation-density GaN from a single growth on a textured substrate
journal, November 2000


Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures
journal, January 1999


Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
journal, January 1998