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Title: Cantilever epitaxial process

Abstract

A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174418
Patent Number(s):
6,599,362
Application Number:
09/754,803
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-L
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ashby, Carol I., Follstaedt, David M., Mitchell, Christine C., and Han, Jung. Cantilever epitaxial process. United States: N. p., 2003. Web.
Ashby, Carol I., Follstaedt, David M., Mitchell, Christine C., & Han, Jung. Cantilever epitaxial process. United States.
Ashby, Carol I., Follstaedt, David M., Mitchell, Christine C., and Han, Jung. Tue . "Cantilever epitaxial process". United States. https://www.osti.gov/servlets/purl/1174418.
@article{osti_1174418,
title = {Cantilever epitaxial process},
author = {Ashby, Carol I. and Follstaedt, David M. and Mitchell, Christine C. and Han, Jung},
abstractNote = {A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {7}
}

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