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Title: Process for growing epitaxial gallium nitride and composite wafers

Abstract

A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

Inventors:
; ; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174323
Patent Number(s):
6563144
Application Number:
09/824,843
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC03-76F00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Weber, Eicke R., Subramanya, Sudhir G., Kim, Yihwan, and Kruger, Joachim. Process for growing epitaxial gallium nitride and composite wafers. United States: N. p., 2003. Web.
Weber, Eicke R., Subramanya, Sudhir G., Kim, Yihwan, & Kruger, Joachim. Process for growing epitaxial gallium nitride and composite wafers. United States.
Weber, Eicke R., Subramanya, Sudhir G., Kim, Yihwan, and Kruger, Joachim. Tue . "Process for growing epitaxial gallium nitride and composite wafers". United States. https://www.osti.gov/servlets/purl/1174323.
@article{osti_1174323,
title = {Process for growing epitaxial gallium nitride and composite wafers},
author = {Weber, Eicke R. and Subramanya, Sudhir G. and Kim, Yihwan and Kruger, Joachim},
abstractNote = {A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {5}
}

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