Title: Growth process for gallium nitride porous nanorods

Abstract

A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

Inventors:

Wildeson, Isaac Harshman; Sands, Timothy David

Issue Date:

2015-03-24

Research Org.:

Purdue Univ., West Lafayette, IN (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1174203

Patent Number(s):

8986835

Application Number:

13/080,165

Assignee:

Purdue Research Foundation (West Lafayette, IN)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y40/00 - Manufacture or treatment of nanostructures

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/04 - Pattern deposit, e.g. by using masks
C30B29/38 - Nitrides
C30B29/406 - {Gallium nitride}
C30B29/60 - characterised by shape
C30B29/66 - Crystals of complex geometrical shape, e.g. tubes, cylinders

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/843 - Gas phase catalytic growth, i.e. chemical vapor deposition

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/2975 - Tubular or cellular

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DOE Contract Number:  

FC26-06NT42862

Resource Type:

Patent

Resource Relation:

Patent File Date: 2011 Apr 05

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE