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Title: Stretchable transistors with buckled carbon nanotube films as conducting channels

Abstract

Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

Inventors:
;
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174190
Patent Number(s):
8987707
Application Number:
13/971,177
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS
DOE Contract Number:  
SC0006414
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Aug 20
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Arnold, Michael S, and Xu, Feng. Stretchable transistors with buckled carbon nanotube films as conducting channels. United States: N. p., 2015. Web.
Arnold, Michael S, & Xu, Feng. Stretchable transistors with buckled carbon nanotube films as conducting channels. United States.
Arnold, Michael S, and Xu, Feng. Tue . "Stretchable transistors with buckled carbon nanotube films as conducting channels". United States. https://www.osti.gov/servlets/purl/1174190.
@article{osti_1174190,
title = {Stretchable transistors with buckled carbon nanotube films as conducting channels},
author = {Arnold, Michael S and Xu, Feng},
abstractNote = {Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 24 00:00:00 EDT 2015},
month = {Tue Mar 24 00:00:00 EDT 2015}
}

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