Stretchable transistors with buckled carbon nanotube films as conducting channels
Abstract
Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.
- Inventors:
- Issue Date:
- Research Org.:
- Wisconsin Alumni Research Foundation, Madison, WI (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174190
- Patent Number(s):
- 8987707
- Application Number:
- 13/971,177
- Assignee:
- Wisconsin Alumni Research Foundation (Madison, WI)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- SC0006414
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Aug 20
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Arnold, Michael S, and Xu, Feng. Stretchable transistors with buckled carbon nanotube films as conducting channels. United States: N. p., 2015.
Web.
Arnold, Michael S, & Xu, Feng. Stretchable transistors with buckled carbon nanotube films as conducting channels. United States.
Arnold, Michael S, and Xu, Feng. Tue .
"Stretchable transistors with buckled carbon nanotube films as conducting channels". United States. https://www.osti.gov/servlets/purl/1174190.
@article{osti_1174190,
title = {Stretchable transistors with buckled carbon nanotube films as conducting channels},
author = {Arnold, Michael S and Xu, Feng},
abstractNote = {Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {3}
}
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