Title: Stretchable transistors with buckled carbon nanotube films as conducting channels

Abstract

Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

Inventors:

Arnold, Michael S; Xu, Feng

Issue Date:

2015-03-24

Research Org.:

Wisconsin Alumni Research Foundation, Madison, WI (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1174190

Patent Number(s):

8987707

Application Number:

13/971,177

Assignee:

Wisconsin Alumni Research Foundation (Madison, WI)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/66439 - {with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
H01L29/775 - with one dimensional charge carrier gas channel, e.g. quantum wire FET

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS

H05K1/0283 - {Stretchable printed circuits}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/938 - Field effect transistors, FETS, with nanowire- or nanotube-channel region

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DOE Contract Number:  

SC0006414

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013 Aug 20

Country of Publication:

United States

Language:

English

Subject:

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY