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Title: Highly directional thermal emitter

Abstract

A highly directional thermal emitter device comprises a two-dimensional periodic array of heavily doped semiconductor structures on a surface of a substrate. The array provides a highly directional thermal emission at a peak wavelength between 3 and 15 microns when the array is heated. For example, highly doped silicon (HDSi) with a plasma frequency in the mid-wave infrared was used to fabricate nearly perfect absorbing two-dimensional gratings structures that function as highly directional thermal radiators. The absorption and emission characteristics of the HDSi devices possessed a high degree of angular dependence for infrared absorption in the 10-12 micron range, while maintaining high reflectivity of solar radiation (.about.64%) at large incidence angles.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174188
Patent Number(s):
8,987,754
Application Number:
14/028,181
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Sep 16
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ribaudo, Troy, Shaner, Eric A, Davids, Paul, and Peters, David W. Highly directional thermal emitter. United States: N. p., 2015. Web.
Ribaudo, Troy, Shaner, Eric A, Davids, Paul, & Peters, David W. Highly directional thermal emitter. United States.
Ribaudo, Troy, Shaner, Eric A, Davids, Paul, and Peters, David W. Tue . "Highly directional thermal emitter". United States. https://www.osti.gov/servlets/purl/1174188.
@article{osti_1174188,
title = {Highly directional thermal emitter},
author = {Ribaudo, Troy and Shaner, Eric A and Davids, Paul and Peters, David W},
abstractNote = {A highly directional thermal emitter device comprises a two-dimensional periodic array of heavily doped semiconductor structures on a surface of a substrate. The array provides a highly directional thermal emission at a peak wavelength between 3 and 15 microns when the array is heated. For example, highly doped silicon (HDSi) with a plasma frequency in the mid-wave infrared was used to fabricate nearly perfect absorbing two-dimensional gratings structures that function as highly directional thermal radiators. The absorption and emission characteristics of the HDSi devices possessed a high degree of angular dependence for infrared absorption in the 10-12 micron range, while maintaining high reflectivity of solar radiation (.about.64%) at large incidence angles.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {3}
}

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Works referenced in this record:

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