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Title: Highly directional thermal emitter

A highly directional thermal emitter device comprises a two-dimensional periodic array of heavily doped semiconductor structures on a surface of a substrate. The array provides a highly directional thermal emission at a peak wavelength between 3 and 15 microns when the array is heated. For example, highly doped silicon (HDSi) with a plasma frequency in the mid-wave infrared was used to fabricate nearly perfect absorbing two-dimensional gratings structures that function as highly directional thermal radiators. The absorption and emission characteristics of the HDSi devices possessed a high degree of angular dependence for infrared absorption in the 10-12 micron range, while maintaining high reflectivity of solar radiation (.about.64%) at large incidence angles.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1174188
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
Patent Number(s):
8,987,754
Application Number:
14/028,181
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2013 Sep 16
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Zero infrared reflectance anomaly in doped silicon lamellar gratings. I. From antireflection to total absorption
journal, December 1995