Highly directional thermal emitter
Abstract
A highly directional thermal emitter device comprises a two-dimensional periodic array of heavily doped semiconductor structures on a surface of a substrate. The array provides a highly directional thermal emission at a peak wavelength between 3 and 15 microns when the array is heated. For example, highly doped silicon (HDSi) with a plasma frequency in the mid-wave infrared was used to fabricate nearly perfect absorbing two-dimensional gratings structures that function as highly directional thermal radiators. The absorption and emission characteristics of the HDSi devices possessed a high degree of angular dependence for infrared absorption in the 10-12 micron range, while maintaining high reflectivity of solar radiation (.about.64%) at large incidence angles.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174188
- Patent Number(s):
- 8987754
- Application Number:
- 14/028,181
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Sep 16
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Ribaudo, Troy, Shaner, Eric A, Davids, Paul, and Peters, David W. Highly directional thermal emitter. United States: N. p., 2015.
Web.
Ribaudo, Troy, Shaner, Eric A, Davids, Paul, & Peters, David W. Highly directional thermal emitter. United States.
Ribaudo, Troy, Shaner, Eric A, Davids, Paul, and Peters, David W. Tue .
"Highly directional thermal emitter". United States. https://www.osti.gov/servlets/purl/1174188.
@article{osti_1174188,
title = {Highly directional thermal emitter},
author = {Ribaudo, Troy and Shaner, Eric A and Davids, Paul and Peters, David W},
abstractNote = {A highly directional thermal emitter device comprises a two-dimensional periodic array of heavily doped semiconductor structures on a surface of a substrate. The array provides a highly directional thermal emission at a peak wavelength between 3 and 15 microns when the array is heated. For example, highly doped silicon (HDSi) with a plasma frequency in the mid-wave infrared was used to fabricate nearly perfect absorbing two-dimensional gratings structures that function as highly directional thermal radiators. The absorption and emission characteristics of the HDSi devices possessed a high degree of angular dependence for infrared absorption in the 10-12 micron range, while maintaining high reflectivity of solar radiation (.about.64%) at large incidence angles.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 24 00:00:00 EDT 2015},
month = {Tue Mar 24 00:00:00 EDT 2015}
}
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