Photon detector configured to employ the Gunn effect and method of use
Abstract
Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1172749
- Patent Number(s):
- 8981312
- Application Number:
- 14/023,348
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Sep 10
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Citation Formats
Cich, Michael J. Photon detector configured to employ the Gunn effect and method of use. United States: N. p., 2015.
Web.
Cich, Michael J. Photon detector configured to employ the Gunn effect and method of use. United States.
Cich, Michael J. Tue .
"Photon detector configured to employ the Gunn effect and method of use". United States. https://www.osti.gov/servlets/purl/1172749.
@article{osti_1172749,
title = {Photon detector configured to employ the Gunn effect and method of use},
author = {Cich, Michael J},
abstractNote = {Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {3}
}
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Works referenced in this record:
Bulk GaAs room temperature radiation detectors
journal, November 1992
- McGregor, Douglas S.; Knoll, Glenn F.; Eisen, Yosef
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 322, Issue 3, p. 487-492
Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base materials
journal, June 2007
- Dubecký, František; Ferrari, Claudio; Korytár, Dušan
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 576, Issue 1, p. 27-31
Ion implantation process for fabricating high frequency avalanche devices
patent, December 1977
- Lee, Don-Hee; Weller, Kenneth P.; Ying, Robert S.
- US Patent Document 4,064,620
Transferred electron device
patent, January 1990
- Cooper, James A.; Thornber, Karvel K.
- US Patent Document 4,894,689
Transferred electron effect device
patent, October 1997
- Battersby, Stephen J.
- US Patent Document 5,675,157
Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn diode and structure for assembly of the same
patent, February 2003
- Nakagawa, Atsushi; Watanabe, Kenichi
- US Patent Document 6,514,832
Method and system for performance improvement of photodetectors and solar cells
patent, January 2004
- Chernyak, Leonid; Schulte, Alfons
- US Patent Document 6,674,064
Optoelectronic device with lateral pin or pin junction
patent-application, March 2012
- Atanackovic, Petar Branko; Duvall, Steven Grant
- US Patent Application 13/265850; 20120049242