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Title: Membrane projection lithography

Abstract

The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1172748
Patent Number(s):
8,981,337
Application Number:
14/017,132
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Sep 03
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Burckel, David Bruce, Davids, Paul S, Resnick, Paul J, and Draper, Bruce L. Membrane projection lithography. United States: N. p., 2015. Web.
Burckel, David Bruce, Davids, Paul S, Resnick, Paul J, & Draper, Bruce L. Membrane projection lithography. United States.
Burckel, David Bruce, Davids, Paul S, Resnick, Paul J, and Draper, Bruce L. Tue . "Membrane projection lithography". United States. https://www.osti.gov/servlets/purl/1172748.
@article{osti_1172748,
title = {Membrane projection lithography},
author = {Burckel, David Bruce and Davids, Paul S and Resnick, Paul J and Draper, Bruce L},
abstractNote = {The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {3}
}

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