Photon extraction from nitride ultraviolet light-emitting devices
Abstract
In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
- Inventors:
- Issue Date:
- Research Org.:
- Crystal IS, Inc., Green Island, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1171104
- Patent Number(s):
- 8962359
- Application Number:
- 13/553,093
- Assignee:
- Crystal IS, Inc. (Green Island, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W911NF-09-2-0068
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Jul 19
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices. United States: N. p., 2015.
Web.
Schowalter, Leo J, Chen, Jianfeng, & Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices. United States.
Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Tue .
"Photon extraction from nitride ultraviolet light-emitting devices". United States. https://www.osti.gov/servlets/purl/1171104.
@article{osti_1171104,
title = {Photon extraction from nitride ultraviolet light-emitting devices},
author = {Schowalter, Leo J and Chen, Jianfeng and Grandusky, James R},
abstractNote = {In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {2}
}
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Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
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