Photon extraction from nitride ultraviolet light-emitting devices

Title: Photon extraction from nitride ultraviolet light-emitting devices

In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Inventors:: Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

Issue Date:: 2015-02-24

OSTI Identifier:: 1171104

Assignee:: Crystal IS, Inc. (Green Island, NY) CHO

Patent Number(s):: 8,962,359

Application Number:: 13/553,093

Contract Number:: W911NF-09-2-0068

Resource Relation:: Patent File Date: 2012 Jul 19

Research Org:: Crystal IS, Inc., Green Island, NY (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION

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High extraction efficiency ultraviolet light-emitting diode

Patent Wierer, Jonathan ; Montano, Ines ; Allerman, Andrew A.

Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm aremore »« less
Full Text Available November 2015