Photon extraction from nitride ultraviolet light-emitting devices

Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

Title: Photon extraction from nitride ultraviolet light-emitting devices

Abstract

In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Inventors:: Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

Issue Date:: 2015-02-24

Research Org.:: Crystal IS, Inc., Green Island, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1171104

Patent Number(s):: 8962359

Application Number:: 13/553,093

Assignee:: Crystal IS, Inc. (Green Island, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L33/58 - Optical field-shaping elements
H01L33/405 - {Reflective materials}
H01L2933/0058 - relating to optical field-shaping elements
H01L33/54 - having a particular shape
H01L33/56 - Materials, e.g. epoxy or silicone resin

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DOE Contract Number:: W911NF-09-2-0068

Resource Type:: Patent

Resource Relation:: Patent File Date: 2012 Jul 19

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION

Citation Formats


                    Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices.  United States: N. p., 2015. 
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                    Schowalter, Leo J, Chen, Jianfeng, & Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices.  United States.

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                    Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Tue .  
        "Photon extraction from nitride ultraviolet light-emitting devices".  United States.  https://www.osti.gov/servlets/purl/1171104.

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@article{osti_1171104,

  title        = {Photon extraction from nitride ultraviolet light-emitting devices},

  author       = {Schowalter, Leo J and Chen, Jianfeng and Grandusky, James R},

  abstractNote = {In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2015},

  month        = {2}

}

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Nepal, N.; Nam, K. B.; Nakarmi, M. L.
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Kazan, M.; Rufflé, B.; Zgheib, Ch.
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Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics
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Schweizer, S.; Rogulis, U.; Spaeth, J.-M.
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Trinkler, L.; Berzina, B.
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Trinkler, L.; Bøtter-Jensen, L.; Christensen, P.
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Trinkler, L.; Berzina, Baiba; Sils, Janis
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Characterization of bulk AlN crystals with positron annihilation spectroscopy
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Tuomisto, F.; Mäki, J.-M.; Chemekova, T. Yu.
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The nitrogen vacancy in aluminium nitride
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Vail, J. M.; Chevrier, D. K.; Pandey, R.
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Van de Walle, Chris G.; Neugebauer, Jörg
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Cheng, Bo-Siao; Chiu, Ching-Hsueh; Lo, Ming-Hua
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Iwaya, M.; Takanami, S.; Miyazaki, A.
physica status solidi (a), Vol. 200, Issue 1, p. 110-113
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Maier, M.; Köhler, K.; Kunzer, M.
physica status solidi (c), Vol. 5, Issue 6, p. 2133-2135
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Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatterns
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Park, Manshik; Guiduk, Yu; Shin, Kyusoon
Journal of Crystal Growth, Vol. 326, Issue 1, p. 28-32
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Akiba, Masahiro; Hirayama, Hideki; Tomita, Yuji
physica status solidi (c), Vol. 9, Issue 3-4, p. 806-809
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AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
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Shatalov, Max; Sun, Wenhong; Lunev, Alex
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Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector
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Lobo, N.; Rodriguez, H.; Knauer, A.
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AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency
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Gutt, Richard; Passow, Thorsten; Kunzer, Michael
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Seo, Tae Hoon; Lee, Kang Jea; Park, Ah Hyun
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InGaN/AlGaN Ultraviolet Light-Emitting Diode with a Ti ₃ O ₅ /Al ₂ O ₃ Distributed Bragg Reflector
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Jeong, Tak; Lee, Hyun Haeng; Park, Si-Hyun
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Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
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Inazu, Tetsuhiko; Fukahori, Shinya; Pernot, Cyril
Japanese Journal of Applied Physics, Vol. 50
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Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate
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Lee, Tsung-Xian; Gao, Ko-Fon; Chien, Wei-Ting
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Title: Photon extraction from nitride ultraviolet light-emitting devices

Abstract

Citation Formats

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates journal, August 2002

Sublimation growth and characterization of bulk aluminum nitride single crystals journal, August 1997

Characterization of bulk AlN with low oxygen content journal, September 2004

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes journal, November 2003

Mixing Rocksalt and Wurtzite Structure Binary Nitrides to Form Novel Ternary Alloys: ScGaN and MnGaN journal, January 2003

On the preparation, optical properties and electrical behaviour of aluminium nitride journal, April 1967

Phase equilibria pertinent to the growth of cubic boron nitride journal, May 1972

The estimation of maximum growth rate for aluminium nitride crystals grown by direct sublimation journal, November 1992

The synthesis of aluminum nitride single crystals journal, March 1974

Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality journal, January 2002

Electrical conductivity of materials from mixed aluminum and silicon nitrides journal, November 1970

Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates — The Dependence on Dislocation Density and Structure journal, November 1999

Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy journal, May 2005

Pinholes, Dislocations and Strain Relaxation in InGaN journal, January 1998

n-type AlN layer by Si ion implantation journal, May 2006

The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation journal, January 1970

Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN journal, January 1984

Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere journal, November 1999

Formation of Solid Solution of Al1-xSixN (0<x≤ 12%) Ternary Alloy journal, October 2001

The BeO — MgO system journal, January 1964

A Global Growth Rate Model for Aluminum Nitride Sublimation journal, January 2002

Characterization of Aluminum Nitride Crystals Grown by Sublimation journal, December 2001

Dimers [Al2N6]12- and Chains 1∞[AlN4/23-] in the Crystal Structures of Ca6[Al2N6] and Ba3[Al2N4] journal, April 1999

Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN journal, June 2006

Defects in epitaxial multilayers: I. Misfit dislocations journal, December 1974

Sublimation growth of AlN bulk crystals in Ta crucibles journal, July 2005

Effects of Al composition on luminescence properties of europium implanted AlxGa1−xN (0 ≤ x ≤ 1) journal, December 2003

Li3[ScN2]: The First Nitridoscandate(III)—Tetrahedral Sc Coordination and Unusual MX2 Framework journal, September 2003

Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere journal, January 2004

Recent Developments in Nitride Chemistry journal, October 1998

Mass transfer in AlN crystal growth at high temperatures journal, March 2004

Phase relationships in the system Y-A1-O-N journal, May 1991

Determination of the critical layer thickness in the InGaN/GaN heterostructures journal, November 1999

Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN journal, December 2002

Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals journal, May 2002

Report on the growth of bulk aluminum nitride and subsequent substrate preparation journal, October 2001

Growth of AlN bulk crystals from the vapor phase journal, January 2001

Seeded growth of AlN bulk single crystals by sublimation journal, June 2002

Fabrication of native, single-crystal AlN substrates journal, December 2003

On mechanisms of sublimation growth of AlN bulk crystals journal, April 2000

High-quality and crack-free AlxGa1−xN (x∼0.2) grown on sapphire by a two-step growth method journal, April 2005

Physical vapor transport growth of large AlN crystals journal, March 2003

Ain single crystals journal, December 1977

Growth of high purity AlN crystals journal, July 1976

Properties of Crucible Materials for Bulk Growth of AlN journal, January 2003

Some effects of oxygen impurities on AlN and GaN journal, December 2002

AlGaN/GaN heterostructures on insulating AlGaN nucleation layers journal, July 1999

Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire journal, October 2005

Optical Properties of Strained AlGaN and GaInN on GaN journal, February 1997

Degradation in AlGaInN lasers journal, December 2003

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres journal, May 2006

Intentional control of n -type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1) journal, August 2002

Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers journal, November 2001

Doping of Aigan Alloys journal, January 1998

DX -center formation in wurtzite and zinc-blende Al x Ga 1 − x N journal, January 1998

Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition journal, May 2003

Synthesis of the Cubic Form of Boron Nitride journal, March 1961

Preparation of GaN Single Crystals Using a Na Flux journal, February 1997

DX -behavior of Si in AlN journal, June 2000

Seeded growth of AlN single crystals by physical vapor transport journal, January 2006

F-Type Centers in Neutron-Irradiated AIN journal, January 1990

Luminescence mechanisms of oxygen-related defects in AlN journal, January 2002

Point defect content and optical transitions in bulk aluminum nitride crystals journal, June 2009

PVT growth of bulk AlN crystals with low oxygen contamination journal, December 2003

Polarization-dependent below band-gap optical absorption of aluminum nitride bulk crystals journal, April 2008

Deep level defects and doping in high Al mole fraction AlGaN journal, January 2003

Chemical Mechanical Polishing of Gallium Nitride journal, January 2002

Optical constants of epitaxial AlGaN films and their temperature dependence journal, November 1997

Lattice Vibration Spectra of Aluminum Nitride journal, June 1967

Native oxide and hydroxides and their implications for bulk AlN crystal growth journal, August 2008

Electron paramagnetic resonance of a donor in aluminum nitride crystals journal, February 2006

Shallow donors in GaN journal, November 2003

Properties of Bulk AlN grown by thermodecomposition of AlCl3⋅NH3 journal, September 2003

Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors journal, July 2005

The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen journal, March 1999

Electron Paramagnetic Center in Neutron-Irradiated AlN journal, April 1990

Study of cathodoluminescence spectroscopy of aluminum nitride conference, September 1996

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
journal, August 2002

Sublimation growth and characterization of bulk aluminum nitride single crystals
journal, August 1997

Characterization of bulk AlN with low oxygen content
journal, September 2004

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes
journal, November 2003

Mixing Rocksalt and Wurtzite Structure Binary Nitrides to Form Novel Ternary Alloys: ScGaN and MnGaN
journal, January 2003

On the preparation, optical properties and electrical behaviour of aluminium nitride
journal, April 1967

Phase equilibria pertinent to the growth of cubic boron nitride
journal, May 1972

The estimation of maximum growth rate for aluminium nitride crystals grown by direct sublimation
journal, November 1992

The synthesis of aluminum nitride single crystals
journal, March 1974

Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
journal, January 2002

Electrical conductivity of materials from mixed aluminum and silicon nitrides
journal, November 1970

Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates — The Dependence on Dislocation Density and Structure
journal, November 1999

Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy
journal, May 2005

Pinholes, Dislocations and Strain Relaxation in InGaN
journal, January 1998

n-type AlN layer by Si ion implantation
journal, May 2006

The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation
journal, January 1970

Equilibrium pressure of N₂ over GaN and high pressure solution growth of GaN
journal, January 1984

Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere
journal, November 1999

Formation of Solid Solution of Al1-xSixN (0<x≤ 12%) Ternary Alloy
journal, October 2001

The BeO — MgO system
journal, January 1964

A Global Growth Rate Model for Aluminum Nitride Sublimation
journal, January 2002

Characterization of Aluminum Nitride Crystals Grown by Sublimation
journal, December 2001

Dimers [Al2N6]12- and Chains 1∞[AlN4/23-] in the Crystal Structures of Ca6[Al2N6] and Ba3[Al2N4]
journal, April 1999

Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
journal, June 2006

Defects in epitaxial multilayers: I. Misfit dislocations
journal, December 1974

Sublimation growth of AlN bulk crystals in Ta crucibles
journal, July 2005

Effects of Al composition on luminescence properties of europium implanted Al_xGa_1−xN (0 ≤ x ≤ 1)
journal, December 2003

Li3[ScN2]: The First Nitridoscandate(III)—Tetrahedral Sc Coordination and Unusual MX2 Framework
journal, September 2003

Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
journal, January 2004

Recent Developments in Nitride Chemistry
journal, October 1998

Mass transfer in AlN crystal growth at high temperatures
journal, March 2004

Phase relationships in the system Y-A1-O-N
journal, May 1991

Determination of the critical layer thickness in the InGaN/GaN heterostructures
journal, November 1999

Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
journal, December 2002

Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
journal, May 2002

Report on the growth of bulk aluminum nitride and subsequent substrate preparation
journal, October 2001

Growth of AlN bulk crystals from the vapor phase
journal, January 2001

Seeded growth of AlN bulk single crystals by sublimation
journal, June 2002

Fabrication of native, single-crystal AlN substrates
journal, December 2003

On mechanisms of sublimation growth of AlN bulk crystals
journal, April 2000

High-quality and crack-free Al_xGa_1−xN (x∼0.2) grown on sapphire by a two-step growth method
journal, April 2005

Physical vapor transport growth of large AlN crystals
journal, March 2003

Ain single crystals
journal, December 1977

Growth of high purity AlN crystals
journal, July 1976

Properties of Crucible Materials for Bulk Growth of AlN
journal, January 2003

Some effects of oxygen impurities on AlN and GaN
journal, December 2002

AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
journal, July 1999

Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire
journal, October 2005

Optical Properties of Strained AlGaN and GaInN on GaN
journal, February 1997

Degradation in AlGaInN lasers
journal, December 2003

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006

Intentional control of n -type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
journal, August 2002

Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers
journal, November 2001

Doping of Aigan Alloys
journal, January 1998

$DX$ -center formation in wurtzite and zinc-blende ${Al}_{x} {Ga}_{1 - x} N$
journal, January 1998

Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition
journal, May 2003

Synthesis of the Cubic Form of Boron Nitride
journal, March 1961

Preparation of GaN Single Crystals Using a Na Flux
journal, February 1997

$DX$ -behavior of Si in AlN
journal, June 2000

Seeded growth of AlN single crystals by physical vapor transport
journal, January 2006

F-Type Centers in Neutron-Irradiated AIN
journal, January 1990

Luminescence mechanisms of oxygen-related defects in AlN
journal, January 2002

Point defect content and optical transitions in bulk aluminum nitride crystals
journal, June 2009

PVT growth of bulk AlN crystals with low oxygen contamination
journal, December 2003

Polarization-dependent below band-gap optical absorption of aluminum nitride bulk crystals
journal, April 2008

Deep level defects and doping in high Al mole fraction AlGaN
journal, January 2003

Chemical Mechanical Polishing of Gallium Nitride
journal, January 2002

Optical constants of epitaxial AlGaN films and their temperature dependence
journal, November 1997

Lattice Vibration Spectra of Aluminum Nitride
journal, June 1967

Native oxide and hydroxides and their implications for bulk AlN crystal growth
journal, August 2008

Electron paramagnetic resonance of a donor in aluminum nitride crystals
journal, February 2006

Shallow donors in GaN
journal, November 2003

Properties of Bulk AlN grown by thermodecomposition of AlCl₃⋅NH₃
journal, September 2003

Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors
journal, July 2005

The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen
journal, March 1999

Electron Paramagnetic Center in Neutron-Irradiated AlN
journal, April 1990

Study of cathodoluminescence spectroscopy of aluminum nitride
conference, September 1996

Optical properties of AlN determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry data
journal, November 1999

Oxygen behavior in aluminum nitride
journal, November 2005

Effect of point defects on the decay of the longitudinal optical mode
journal, May 2002