Photon extraction from nitride ultraviolet light-emitting devices
Abstract
In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
- Inventors:
- Issue Date:
- Research Org.:
- Crystal IS, Inc., Green Island, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1171104
- Patent Number(s):
- 8962359
- Application Number:
- 13/553,093
- Assignee:
- Crystal IS, Inc. (Green Island, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W911NF-09-2-0068
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Jul 19
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices. United States: N. p., 2015.
Web.
Schowalter, Leo J, Chen, Jianfeng, & Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices. United States.
Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Tue .
"Photon extraction from nitride ultraviolet light-emitting devices". United States. https://www.osti.gov/servlets/purl/1171104.
@article{osti_1171104,
title = {Photon extraction from nitride ultraviolet light-emitting devices},
author = {Schowalter, Leo J and Chen, Jianfeng and Grandusky, James R},
abstractNote = {In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {2}
}
Works referenced in this record:
Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
journal, August 2002
- Arulkumaran, S.; Sakai, M.; Egawa, T.
- Applied Physics Letters, Vol. 81, Issue 6
Sublimation growth and characterization of bulk aluminum nitride single crystals
journal, August 1997
- Balkaş, Cengiz M.; Sitar, Zlatko; Zheleva, Tsvetanka
- Journal of Crystal Growth, Vol. 179, Issue 3-4, p. 363-370
Characterization of bulk AlN with low oxygen content
journal, September 2004
- Bickermann, M.; Epelbaum, B. M.; Winnacker, A.
- Journal of Crystal Growth, Vol. 269, Issue 2-4, p. 432-442
Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes
journal, November 2003
- Chitnis, A.; Adivarahan, V.; Zhang, J. P.
- physica status solidi (a), Vol. 200, Issue 1, p. 99-101
Mixing Rocksalt and Wurtzite Structure Binary Nitrides to Form Novel Ternary Alloys: ScGaN and MnGaN
journal, January 2003
- Constantin, Costel; Al-Brithen, Hamad; Haider, Muhammad B.
- MRS Proceedings, Vol. 799
On the preparation, optical properties and electrical behaviour of aluminium nitride
journal, April 1967
- Cox, G. A.; Cummins, D. O.; Kawabe, K.
- Journal of Physics and Chemistry of Solids, Vol. 28, Issue 4, p. 543-548
Phase equilibria pertinent to the growth of cubic boron nitride
journal, May 1972
- DeVries, R. C.; Fleischer, J. F.
- Journal of Crystal Growth, Vol. 13-14, p. 88-92
The estimation of maximum growth rate for aluminium nitride crystals grown by direct sublimation
journal, November 1992
- Dryburgh, P. M.
- Journal of Crystal Growth, Vol. 125, Issue 1-2, p. 65-68
The synthesis of aluminum nitride single crystals
journal, March 1974
- Dugger, Cortland O.
- Materials Research Bulletin, Vol. 9, Issue 3, p. 331-336
Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
journal, January 2002
- Epelbaum, Boris M.; Hofmann, Dieter; Bickermann, Matthias
- Materials Science Forum, Vol. 389-393, p. 1445-1448
Electrical conductivity of materials from mixed aluminum and silicon nitrides
journal, November 1970
- Gorbatov, A. G.; Kamyshov, V. M.
- Soviet Powder Metallurgy and Metal Ceramics, Vol. 9, Issue 11, p. 917-920
Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates — The Dependence on Dislocation Density and Structure
journal, November 1999
- Hacke, P.; Kuramata, A.; Domen, K.
- physica status solidi (b), Vol. 216, Issue 1, p. 639-644
Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy
journal, May 2005
- Hermann, M.; Furtmayr, F.; Bergmaier, A.
- Applied Physics Letters, Vol. 86, Issue 19, Article No. 192108
Pinholes, Dislocations and Strain Relaxation in InGaN
journal, January 1998
- Jahnen, B.; Albrecht, M.; Dorsch, W.
- MRS Internet Journal of Nitride Semiconductor Research, Vol. 3
n-type AlN layer by Si ion implantation
journal, May 2006
- Kanechika, Masakazu; Kachi, Tetsu
- Applied Physics Letters, Vol. 88, Issue 20
The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation
journal, January 1970
- Karel, F.; Pastrňák, J.
- Czechoslovak Journal of Physics B, Vol. 20, Issue 1, p. 46-55
Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN
journal, January 1984
- Karpiński, J.; Jun, J.; Porowski, S.
- Journal of Crystal Growth, Vol. 66, Issue 1, p. 1-10
Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere
journal, November 1999
- Karpov, S. Yu.; Zimina, D. V.; Makarov, Yu. N.
- physica status solidi (a), Vol. 176, Issue 1, p. 435-438
Formation of Solid Solution of Al1-xSixN (0<x≤ 12%) Ternary Alloy
journal, October 2001
- Kasu, Makoto; Taniyasu, Yoshitaka; Kobayashi, Naoki
- Japanese Journal of Applied Physics, Vol. 40, Issue Part 2, No. 10A
The BeO — MgO system
journal, January 1964
- Kordis, J.
- Journal of Nuclear Materials, Vol. 14, p. 322-325
A Global Growth Rate Model for Aluminum Nitride Sublimation
journal, January 2002
- Liu, Lianghong; Edgar, J. H.
- Journal of The Electrochemical Society, Vol. 149, Issue 1, p. G12-G15
Characterization of Aluminum Nitride Crystals Grown by Sublimation
journal, December 2001
- Liu, L.; Zhuang, D.; Liu, B.
- physica status solidi (a), Vol. 188, Issue 2, p. 769-774
Dimers [Al2N6]12- and Chains 1∞[AlN4/23-] in the Crystal Structures of Ca6[Al2N6] and Ba3[Al2N4]
journal, April 1999
- Ludwig, M.; Niewa, R.; Kniep, R.
- Zeitschrift für Naturforschung B, Vol. 54, Issue 4
Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
journal, June 2006
- Liu, Rong; Mei, Jin; Srinivasan, Sridhar
- Japanese Journal of Applied Physics, Vol. 45, Issue No. 22
Defects in epitaxial multilayers: I. Misfit dislocations
journal, December 1974
- Matthews, J. W.; Blakeslee, A. E.
- Journal of Crystal Growth, Vol. 27, p. 118-125
Sublimation growth of AlN bulk crystals in Ta crucibles
journal, July 2005
- Mokhov, E. N.; Avdeev, O. V.; Barash, I. S.
- Journal of Crystal Growth, Vol. 281, Issue 1, p. 93-100
Effects of Al composition on luminescence properties of europium implanted AlxGa1−xN (0 ≤ x ≤ 1)
journal, December 2003
- Nakanishi, Y.; Wakahara, A.; Okada, H.
- physica status solidi (c), Vol. 0, Issue 7, p. 2623-2626
Li3[ScN2]: The First Nitridoscandate(III)—Tetrahedral Sc Coordination and Unusual MX2 Framework
journal, September 2003
- Niewa, Rainer; Zherebtsov, Dmitri A.; Leoni, Stefano
- Chemistry - A European Journal, Vol. 9, Issue 17
Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
journal, January 2004
- Noveski, V.; Schlesser, R.; Mahajan, S.
- MRS Internet Journal of Nitride Semiconductor Research, Vol. 9
Recent Developments in Nitride Chemistry
journal, October 1998
- Niewa, R.; DiSalvo, F. J.
- Chemistry of Materials, Vol. 10, Issue 10, p. 2733-2752
Mass transfer in AlN crystal growth at high temperatures
journal, March 2004
- Noveski, V.; Schlesser, R.; Mahajan, S.
- Journal of Crystal Growth, Vol. 264, Issue 1-3, p. 369-378
Phase relationships in the system Y-A1-O-N
journal, May 1991
- Sun, W. Y.; Huang, Z. K.; Tien, T. Y.
- Materials Letters, Vol. 11, Issue 3-4, p. 67-69
Determination of the critical layer thickness in the InGaN/GaN heterostructures
journal, November 1999
- Parker, C. A.; Roberts, J. C.; Bedair, S. M.
- Applied Physics Letters, Vol. 75, Issue 18
Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
journal, December 2002
- Raghothamachar, Balaji; Vetter, William M.; Dudley, Michael
- Journal of Crystal Growth, Vol. 246, Issue 3-4, p. 271-280
Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
journal, May 2002
- Carlos Rojo, J.; Schowalter, Leo J.; Gaska, Remis
- Journal of Crystal Growth, Vol. 240, Issue 3-4, p. 508-512
Report on the growth of bulk aluminum nitride and subsequent substrate preparation
journal, October 2001
- Carlos Rojo, J.; Slack, Glen A.; Morgan, Kenneth
- Journal of Crystal Growth, Vol. 231, Issue 3, p. 317-321
Growth of AlN bulk crystals from the vapor phase
journal, January 2001
- Schlesser, Raoul; Dalmau, Rafael; Yakimova, Rositza
- MRS Proceedings, Vol. 693
Seeded growth of AlN bulk single crystals by sublimation
journal, June 2002
- Schlesser, R.; Dalmau, R.; Sitar, Z.
- Journal of Crystal Growth, Vol. 241, Issue 4, p. 416-420
Fabrication of native, single-crystal AlN substrates
journal, December 2003
- Schowalter, L. J.; Slack, G. A.; Whitlock, J. B.
- physica status solidi (c), Vol. 0, Issue 7, p. 1997-2000
On mechanisms of sublimation growth of AlN bulk crystals
journal, April 2000
- Segal, A. S.; Karpov, S. Yu.; Makarov, Yu. N.
- Journal of Crystal Growth, Vol. 211, Issue 1-4, p. 68-72
High-quality and crack-free AlxGa1−xN (x∼0.2) grown on sapphire by a two-step growth method
journal, April 2005
- Shih, C. F.; Keh, M. Y.; Wang, Y. N.
- Journal of Crystal Growth, Vol. 277, Issue 1-4, p. 44-50
Physical vapor transport growth of large AlN crystals
journal, March 2003
- Singh, N. B.; Berghmans, A.; Zhang, H.
- Journal of Crystal Growth, Vol. 250, Issue 1-2, p. 107-112
Ain single crystals
journal, December 1977
- Slack, G. A.; McNelly, T. F.
- Journal of Crystal Growth, Vol. 42, p. 560-563
Growth of high purity AlN crystals
journal, July 1976
- Slack, Glen A.; McNelly, T. F.
- Journal of Crystal Growth, Vol. 34, Issue 2, p. 263-279
Properties of Crucible Materials for Bulk Growth of AlN
journal, January 2003
- Slack, Glen A.; Whitlock, Jon; Morgan, Ken
- MRS Proceedings, Vol. 798
Some effects of oxygen impurities on AlN and GaN
journal, December 2002
- Slack, Glen A.; Schowalter, Leo J.; Morelli, Donald
- Journal of Crystal Growth, Vol. 246, Issue 3-4, p. 287-298
AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
journal, July 1999
- Smart, J. A.; Schremer, A. T.; Weimann, N. G.
- Applied Physics Letters, Vol. 75, Issue 3
Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire
journal, October 2005
- Song, T. L.
- Journal of Applied Physics, Vol. 98, Issue 8
Optical Properties of Strained AlGaN and GaInN on GaN
journal, February 1997
- Takeuchi, Tetsuya; Takeuchi, Hideo; Sota, Shigetoshi
- Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 2B
Degradation in AlGaInN lasers
journal, December 2003
- Takeya, Motonobu; Mizuno, Takashi; Sasaki, Tomomi
- physica status solidi (c), Vol. 0, Issue 7, p. 2292-2295
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006
- Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
- Nature, Vol. 441, Issue 7091, p. 325-328
Intentional control of n -type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
journal, August 2002
- Taniyasu, Yoshitaka; Kasu, Makoto; Kobayashi, Naoki
- Applied Physics Letters, Vol. 81, Issue 7
Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers
journal, November 2001
- Tomiya, S.; Nakajima, H.; Funato, K.
- physica status solidi (a), Vol. 188, Issue 1, p. 69-72
Doping of Aigan Alloys
journal, January 1998
- Walle, Chris G. Van de; Stampfl, C.; Neugebauer, J.
- MRS Proceedings, Vol. 537
-center formation in wurtzite and zinc-blende
journal, January 1998
- Van de Walle, Chris G.
- Physical Review B, Vol. 57, Issue 4
Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition
journal, May 2003
- Venugopal, R.; Wan, J.; Melloch, M.
- Journal of Electronic Materials, Vol. 32, Issue 5, p. 371-374
Synthesis of the Cubic Form of Boron Nitride
journal, March 1961
- Wentorf, R. H.
- The Journal of Chemical Physics, Vol. 34, Issue 3, p. 809-812
Preparation of GaN Single Crystals Using a Na Flux
journal, February 1997
- Yamane, Hisanori; Shimada, Masahiko; Clarke, Simon J.
- Chemistry of Materials, Vol. 9, Issue 2, p. 413-416
-behavior of Si in AlN
journal, June 2000
- Zeisel, R.; Bayerl, M. W.; Goennenwein, S. T. B.
- Physical Review B, Vol. 61, Issue 24
Seeded growth of AlN single crystals by physical vapor transport
journal, January 2006
- Zhuang, D.; Herro, Z. G.; Schlesser, R.
- Journal of Crystal Growth, Vol. 287, Issue 2, p. 372-375
F-Type Centers in Neutron-Irradiated AIN
journal, January 1990
- Atobe, Kozo; Honda, Makoto; Fukuoka, Noboru
- Japanese Journal of Applied Physics, Vol. 29, Issue Part 1, No. 1
Luminescence mechanisms of oxygen-related defects in AlN
journal, January 2002
- Berzina, B.; Trinkler, L.; Sils, J.
- Radiation Effects and Defects in Solids, Vol. 157, Issue 6-12
Point defect content and optical transitions in bulk aluminum nitride crystals
journal, June 2009
- Bickermann, Matthias; Epelbaum, Boris M.; Filip, Octavian
- physica status solidi (b), Vol. 246, Issue 6, p. 1181-1183
PVT growth of bulk AlN crystals with low oxygen contamination
journal, December 2003
- Bickermann, M.; Epelbaum, B. M.; Winnacker, A.
- physica status solidi (c), Vol. 0, Issue 7
Polarization-dependent below band-gap optical absorption of aluminum nitride bulk crystals
journal, April 2008
- Bickermann, Matthias; Münch, Andreas; Epelbaum, Boris M.
- Journal of Applied Physics, Vol. 103, Issue 7
Deep level defects and doping in high Al mole fraction AlGaN
journal, January 2003
- Bradley, S. T.; Goss, S. H.; Brillson, L. J.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, Issue 6
Chemical Mechanical Polishing of Gallium Nitride
journal, January 2002
- Tavernier, P. R.; Margalith, T.; Coldren, L. A.
- Electrochemical and Solid-State Letters, Vol. 5, Issue 8, p. G61-G64
Optical constants of epitaxial AlGaN films and their temperature dependence
journal, November 1997
- Brunner, D.; Angerer, H.; Bustarret, E.
- Journal of Applied Physics, Vol. 82, Issue 10
Lattice Vibration Spectra of Aluminum Nitride
journal, June 1967
- Collins, A. T.; Lightowlers, E. C.; Dean, P. J.
- Physical Review, Vol. 158, Issue 3, p. 833-838
Native oxide and hydroxides and their implications for bulk AlN crystal growth
journal, August 2008
- Edgar, J. H.; Du, L.; Nyakiti, L.
- Journal of Crystal Growth, Vol. 310, Issue 17, p. 4002-4006
Electron paramagnetic resonance of a donor in aluminum nitride crystals
journal, February 2006
- Evans, S. M.; Giles, N. C.; Halliburton, L. E.
- Applied Physics Letters, Vol. 88, Issue 6, Article No. 062112
Shallow donors in GaN
journal, November 2003
- Freitas, J. A.; Moore, W. J.; Shanabrook, B. V.
- physica status solidi (b), Vol. 240, Issue 2
Properties of Bulk AlN grown by thermodecomposition of AlCl3⋅NH3
journal, September 2003
- Freitas, J. A.; Braga, G. C. B.; Silveira, E.
- Applied Physics Letters, Vol. 83, Issue 13, p. 2584-2586
Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors
journal, July 2005
- Freitas, Jaime A.
- Journal of Crystal Growth, Vol. 281, Issue 1, p. 168-182
The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen
journal, March 1999
- Gutierrez, R.
- Philosophical Magazine Letters, Vol. 79, Issue 3, p. 147-152
Electron Paramagnetic Center in Neutron-Irradiated AlN
journal, April 1990
- Honda, Makoto; Atobe, Kozo; Fukuoka, Noboru
- Japanese Journal of Applied Physics, Vol. 29, Issue Part 2, No. 4
Study of cathodoluminescence spectroscopy of aluminum nitride
conference, September 1996
- Hossain, Fazla R. M.; Tang, Xiao; Wongchotigul, Kobchat
- Microelectronic Manufacturing 1996, SPIE Proceedings
Optical properties of AlN determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry data
journal, November 1999
- Jones, D. J.; French, R. H.; Müllejans, H.
- Journal of Materials Research, Vol. 14, Issue 11
Oxygen behavior in aluminum nitride
journal, November 2005
- Kazan, M.; Rufflé, B.; Zgheib, Ch.
- Journal of Applied Physics, Vol. 98, Issue 10
Effect of point defects on the decay of the longitudinal optical mode
journal, May 2002
- Klemens, P. G.
- Physica B: Condensed Matter, Vol. 316-317, p. 413-416
Thick AlN layers grown by HVPE
journal, July 2005
- Kovalenkov, O.; Soukhoveev, V.; Ivantsov, V.
- Journal of Crystal Growth, Vol. 281, Issue 1, p. 87-92
Optically detected electron paramagnetic resonance of AlN single crystals
journal, January 1999
- Mason, P. M.; Przybylinska, H.; Watkins, G. D.
- Physical Review B, Vol. 59, Issue 3
Metastability of Oxygen Donors in AlGaN
journal, May 1998
- McCluskey, M. D.; Johnson, N. M.; Van de Walle, C. G.
- Physical Review Letters, Vol. 80, Issue 18
Defects and defect identification in group III-nitrides
journal, February 2000
- Meyer, B. K.; Hofmann, D. M.; Alves, H.
- Materials Science and Engineering: B, Vol. 71, Issue 1-3, p. 69-76
Optical Absorption and Cathodoluminescence of Epitaxial Aluminum Nitride Films
journal, July 1982
- Morita, Mizuho; Tsubouchi, Kazuo; Mikoshiba, Nobuo
- Japanese Journal of Applied Physics, Vol. 21, Issue Part 1, No. 7
Electron Spin Resonance Analysis of Lattice Defects in Polycrystalline Aluminum Nitride
journal, June 1997
- Nakahata, Seiji; Sogabe, Kouichi; Matsuura, Takahiro
- Journal of the American Ceramic Society, Vol. 80, Issue 6
Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
journal, March 2009
- Nakarmi, M. L.; Nepal, N.; Lin, J. Y.
- Applied Physics Letters, Vol. 94, Issue 9, Article No. 091903
Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
journal, May 2005
- Nam, K. B.; Nakarmi, M. L.; Lin, J. Y.
- Applied Physics Letters, Vol. 86, Issue 22, Article No. 222108
Optical properties of the nitrogen vacancy in AlN epilayers
journal, February 2004
- Nepal, N.; Nam, K. B.; Nakarmi, M. L.
- Applied Physics Letters, Vol. 84, Issue 7
Photoluminescence studies of impurity transitions in AlGaN alloys
journal, August 2006
- Nepal, N.; Nakarmi, M. L.; Lin, J. Y.
- Applied Physics Letters, Vol. 89, Issue 9, Article No. 092107
Low resistivity aluminum nitride: carbon (AlN : C) films grown by metal organic chemical vapor deposition
journal, March 1996
- Wongchotigul, K.; Chen, N.; Zhang, D. P.
- Materials Letters, Vol. 26, Issue 4-5, p. 223-226
Correlation between biaxial stress and free exciton transition in AlN epilayers
journal, September 2007
- Pantha, B. N.; Nepal, N.; Al Tahtamouni, T. M.
- Applied Physics Letters, Vol. 91, Issue 12
The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process
journal, August 1978
- Perry, P. B.; Rutz, R. F.
- Applied Physics Letters, Vol. 33, Issue 4
Reduction of oxygen contamination in AlN
journal, December 2003
- Salzman, J.; Prawer, S.; Meyler, B.
- physica status solidi (c), Vol. 0, Issue 7, p. 2541-2544
Effect of Impurities on Raman and Photoluminescence Spectra of AlN Bulk Crystals
journal, January 2003
- Sarua, A.; Rajasingam, S.; Kuball, M.
- MRS Proceedings, Vol. 798
Crucible materials for growth of aluminum nitride crystals
journal, July 2005
- Schlesser, R.; Dalmau, R.; Zhuang, D.
- Journal of Crystal Growth, Vol. 281, Issue 1, p. 75-80
Phonon dynamics in AlN lattice contaminated by oxygen
journal, October 2006
- Kazan, M.; Rufflé, B.; Zgheib, Ch.
- Diamond and Related Materials, Vol. 15, Issue 10, p. 1525-1534
Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements
journal, January 2005
- Silveira, E.; Freitas, J. A.; Glembocki, O. J.
- Physical Review B, Vol. 71, Issue 4
Growth of nitride crystals, BN, AlN and GaN by using a Na flux
journal, April 2000
- Yano, M.; Okamoto, M.; Yap, Y. K.
- Diamond and Related Materials, Vol. 9, Issue 3-6, p. 512-515
Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics
journal, May 2000
- Schweizer, S.; Rogulis, U.; Spaeth, J.-M.
- physica status solidi (b), Vol. 219, Issue 1, p. 171-180
Photoluminescence properties of AlN homoepilayers with different orientations
journal, July 2008
- Sedhain, A.; Nepal, N.; Nakarmi, M. L.
- Applied Physics Letters, Vol. 93, Issue 4, Article No. 041905
Luminescence properties of wurtzite AlN nanotips
journal, October 2006
- Shi, Shih-Chen; Chen, Chia Fu; Chattopadhyay, Surojit
- Applied Physics Letters, Vol. 89, Issue 16, Article No. 163127
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
journal, April 2002
- Stampfl, C.; Van de Walle, C. G.
- Physical Review B, Vol. 65, Issue 15
The growth and optical properties of large, high-quality AlN single crystals
journal, November 2004
- Strassburg, Martin; Senawiratne, Jayantha; Dietz, Nikolaus
- Journal of Applied Physics, Vol. 96, Issue 10, p. 5870-5876
Determination of the concentration of oxygen dissolved in the AlN lattice by hot gas extraction from AlN ceramics
journal, January 1991
- Thomas, Andreas; Müller, Gerd
- Journal of the European Ceramic Society, Vol. 8, Issue 1, p. 11-19
Radiation induced recombination processes in AIN ceramics
journal, September 2001
- Trinkler, L.; Berzina, B.
- Journal of Physics: Condensed Matter, Vol. 13, Issue 40
Stimulated luminescence of AlN ceramics induced by ultraviolet radiation
journal, October 2001
- Trinkler, L.; Bøtter-Jensen, L.; Christensen, P.
- Radiation Measurements, Vol. 33, Issue 5, p. 731-735
Spectral properties of AIN ceramics
conference, February 1997
- Trinkler, L.; Berzina, Baiba; Sils, Janis
- International Conference on Advanced Optical Materials and Devices, SPIE Proceedings
Characterization of bulk AlN crystals with positron annihilation spectroscopy
journal, August 2008
- Tuomisto, F.; Mäki, J.-M.; Chemekova, T. Yu.
- Journal of Crystal Growth, Vol. 310, Issue 17, p. 3998-4001
The nitrogen vacancy in aluminium nitride
journal, January 2006
- Vail, J. M.; Chevrier, D. K.; Pandey, R.
- Journal of Physics: Condensed Matter, Vol. 18, Issue 7
First-principles calculations for defects and impurities: Applications to III-nitrides
journal, April 2004
- Van de Walle, Chris G.; Neugebauer, Jörg
- Journal of Applied Physics, Vol. 95, Issue 8
Changes in optical transmittance and surface morphology of AlN thin films exposed to atmosphere
journal, October 1998
- Watanabe, Yoshihisa; Sakuragi, Yoshifumi; Amamoto, Yoshiki
- Journal of Materials Research, Vol. 13, Issue 10
Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment
journal, September 2001
- Katayama-Yoshida, H.; Nishimatsu, T.; Yamamoto, T.
- Journal of Physics: Condensed Matter, Vol. 13, Issue 40
X-ray characterization of bulk AIN single crystals grown by the sublimation technique
journal, March 2003
- Raghothamachar, B.; Dudley, M.; Rojo, J. C.
- Journal of Crystal Growth, Vol. 250, Issue 1-2, p. 244-250
Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN
journal, December 2002
- Gaska, R.; Chen, C.; Yang, J.
- Applied Physics Letters, Vol. 81, Issue 24
Enhancement of light extraction from light emitting diodes
journal, February 2011
- Zhmakin, A. I.
- Physics Reports, Vol. 498, Issue 4-5, p. 189-241
Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays
journal, February 2009
- Kim, B. J.; Jung, H.; Shin, J.
- Thin Solid Films, Vol. 517, Issue 8, p. 2742-2744
Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector
journal, May 2011
- Cheng, Bo-Siao; Chiu, Ching-Hsueh; Lo, Ming-Hua
- IEEE Photonics Technology Letters, Vol. 23, Issue 10
Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate
journal, November 2008
- Chiu, C. H.; Li, Zhen-Yu; Chao, C. L.
- Journal of Crystal Growth, Vol. 310, Issue 23, p. 5170-5174
Optimizing textured structures possessing both optical gradient and diffraction properties to increase the extraction efficiency of light-emitting diodes
journal, October 2012
- Hsu, Chan-Wei; Lee, Yang-Chun; Chen, Hsuen-Li
- Photonics and Nanostructures - Fundamentals and Applications, Vol. 10, Issue 4, p. 523-533
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
journal, June 2010
- Pernot, Cyril; Kim, Myunghee; Fukahori, Shinya
- Applied Physics Express, Vol. 3, Issue 6
Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction
journal, July 2009
- Hong, Eun-Ju; Byeon, Kyeong-Jae; Park, Hyoungwon
- Materials Science and Engineering: B, Vol. 163, Issue 3, p. 170-173
Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching
journal, January 2007
- Cheong, H. S.; Na, M. G.; Choi, Y. J.
- Journal of Crystal Growth, Vol. 298, p. 699-702
High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
journal, October 2005
- Kasugai, Hideki; Miyake, Yasuto; Honshio, Akira
- Japanese Journal of Applied Physics, Vol. 44, Issue 10
Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes
journal, March 2006
- Hong, Hyun-Gi; Kim, Seok-Soon; Kim, Dong-Yu
- Semiconductor Science and Technology, Vol. 21, Issue 5
Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes
journal, April 2012
- Dong, J. J.; Zhang, X. W.; Yin, Z. G.
- Applied Physics Letters, Vol. 100, Issue 17, Article No. 171109
III-nitride blue and UV photonic-crystal light-emitting diodes
conference, October 2004
- Shakya, Jagat B.; Kim, Kyoung Hoon; Oder, Tom N.
- Fourth International Conference on Solid State Lighting, Vol. 5530
Light Extraction Methods in Light-Emitting Diodes
conference, January 2011
- Wierer, Jonathan J.
- CLEO: Science and Innovations, CLEO:2011 - Laser Applications to Photonic Applications
Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes
journal, August 2006
- Ban, Keun-Yong; Hong, Hyun-Gi; Noh, Do-Young
- Materials Science and Engineering: B, Vol. 133, Issue 1-3, p. 26-29
Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
journal, March 2012
- Takehara, Kosuke; Takeda, Kenichiro; Ito, Shun
- Japanese Journal of Applied Physics, Vol. 51
Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning
journal, July 2012
- Ali, M.; Svensk, O.; Riuttanen, L.
- Semiconductor Science and Technology, Vol. 27, Issue 8
Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN
journal, November 2003
- Iwaya, M.; Takanami, S.; Miyazaki, A.
- physica status solidi (a), Vol. 200, Issue 1, p. 110-113
Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
journal, May 2008
- Maier, M.; Köhler, K.; Kunzer, M.
- physica status solidi (c), Vol. 5, Issue 6, p. 2133-2135
Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatterns
journal, July 2011
- Park, Manshik; Guiduk, Yu; Shin, Kyusoon
- Journal of Crystal Growth, Vol. 326, Issue 1, p. 28-32
Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode
journal, February 2012
- Akiba, Masahiro; Hirayama, Hideki; Tomita, Yuji
- physica status solidi (c), Vol. 9, Issue 3-4, p. 806-809
AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
journal, July 2012
- Shatalov, Max; Sun, Wenhong; Lunev, Alex
- Applied Physics Express, Vol. 5, Issue 8
Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector
journal, February 2010
- Lobo, N.; Rodriguez, H.; Knauer, A.
- Applied Physics Letters, Vol. 96, Issue 8
AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency
journal, February 2012
- Gutt, Richard; Passow, Thorsten; Kunzer, Michael
- Applied Physics Express, Vol. 5, Issue 3
340–350 nm GaN-free UV-LEDs
journal, November 2003
- Nishida, T.; Ban, T.; Kobayashi, N.
- physica status solidi (a), Vol. 200, Issue 1, p. 106-109
Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode
journal, January 2011
- Seo, Tae Hoon; Lee, Kang Jea; Park, Ah Hyun
- Optics Express, Vol. 19, Issue 23
InGaN/AlGaN Ultraviolet Light-Emitting Diode with a Ti 3 O 5 /Al 2 O 3 Distributed Bragg Reflector
journal, December 2008
- Jeong, Tak; Lee, Hyun Haeng; Park, Si-Hyun
- Japanese Journal of Applied Physics, Vol. 47, Issue 12
Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
journal, November 2011
- Inazu, Tetsuhiko; Fukahori, Shinya; Pernot, Cyril
- Japanese Journal of Applied Physics, Vol. 50
Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate
journal, January 2007
- Lee, Tsung-Xian; Gao, Ko-Fon; Chien, Wei-Ting
- Optics Express, Vol. 15, Issue 11