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Title: Photon extraction from nitride ultraviolet light-emitting devices

Abstract

In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Inventors:
; ;
Issue Date:
Research Org.:
Crystal IS, Inc., Green Island, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1171104
Patent Number(s):
8,962,359
Application Number:
13/553,093
Assignee:
Crystal IS, Inc. (Green Island, NY)
DOE Contract Number:  
W911NF-09-2-0068
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jul 19
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices. United States: N. p., 2015. Web.
Schowalter, Leo J, Chen, Jianfeng, & Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices. United States.
Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Tue . "Photon extraction from nitride ultraviolet light-emitting devices". United States. https://www.osti.gov/servlets/purl/1171104.
@article{osti_1171104,
title = {Photon extraction from nitride ultraviolet light-emitting devices},
author = {Schowalter, Leo J and Chen, Jianfeng and Grandusky, James R},
abstractNote = {In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {2}
}

Patent:

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Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
journal, March 2012

  • Takehara, Kosuke; Takeda, Kenichiro; Ito, Shun
  • Japanese Journal of Applied Physics, Vol. 51
  • DOI: 10.1143/JJAP.51.042101

Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning
journal, July 2012


Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN
journal, November 2003

  • Iwaya, M.; Takanami, S.; Miyazaki, A.
  • physica status solidi (a), Vol. 200, Issue 1, p. 110-113
  • DOI: 10.1002/pssa.200303504

Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
journal, May 2008

  • Maier, M.; Köhler, K.; Kunzer, M.
  • physica status solidi (c), Vol. 5, Issue 6, p. 2133-2135
  • DOI: 10.1002/pssc.200778475

Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatterns
journal, July 2011


Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode
journal, February 2012

  • Akiba, Masahiro; Hirayama, Hideki; Tomita, Yuji
  • physica status solidi (c), Vol. 9, Issue 3-4, p. 806-809
  • DOI: 10.1002/pssc.201100370

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
journal, July 2012

  • Shatalov, Max; Sun, Wenhong; Lunev, Alex
  • Applied Physics Express, Vol. 5, Issue 8
  • DOI: 10.1143/APEX.5.082101

Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector
journal, February 2010

  • Lobo, N.; Rodriguez, H.; Knauer, A.
  • Applied Physics Letters, Vol. 96, Issue 8
  • DOI: 10.1063/1.3334721

AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency
journal, February 2012

  • Gutt, Richard; Passow, Thorsten; Kunzer, Michael
  • Applied Physics Express, Vol. 5, Issue 3
  • DOI: 10.1143/APEX.5.032101

340–350 nm GaN-free UV-LEDs
journal, November 2003

  • Nishida, T.; Ban, T.; Kobayashi, N.
  • physica status solidi (a), Vol. 200, Issue 1, p. 106-109
  • DOI: 10.1002/pssa.200303411

InGaN/AlGaN Ultraviolet Light-Emitting Diode with a Ti 3 O 5 /Al 2 O 3 Distributed Bragg Reflector
journal, December 2008

  • Jeong, Tak; Lee, Hyun Haeng; Park, Si-Hyun
  • Japanese Journal of Applied Physics, Vol. 47, Issue 12
  • DOI: 10.1143/JJAP.47.8811

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
journal, November 2011

  • Inazu, Tetsuhiko; Fukahori, Shinya; Pernot, Cyril
  • Japanese Journal of Applied Physics, Vol. 50
  • DOI: 10.1143/JJAP.50.122101

Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate
journal, January 2007

  • Lee, Tsung-Xian; Gao, Ko-Fon; Chien, Wei-Ting
  • Optics Express, Vol. 15, Issue 11
  • DOI: 10.1364/OE.15.006670