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Title: Electrostatic MEMS devices with high reliability

Abstract

The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

Inventors:
; ; ; ; ; ; ; ;
Issue Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1170735
Patent Number(s):
8,963,659
Application Number:
13/114,945
Assignee:
Goldsmith,Charles L. (Plano, TX)
DOE Contract Number:  
FG02-02ER46016
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 May 24
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Goldsmith, Charles L, Auciello, Orlando H, Sumant, Anirudha V, Mancini, Derrick C, Gudeman, Chris, Sampath, Suresh, Carlilse, John A, Carpick, Robert W, and Hwang, James. Electrostatic MEMS devices with high reliability. United States: N. p., 2015. Web.
Goldsmith, Charles L, Auciello, Orlando H, Sumant, Anirudha V, Mancini, Derrick C, Gudeman, Chris, Sampath, Suresh, Carlilse, John A, Carpick, Robert W, & Hwang, James. Electrostatic MEMS devices with high reliability. United States.
Goldsmith, Charles L, Auciello, Orlando H, Sumant, Anirudha V, Mancini, Derrick C, Gudeman, Chris, Sampath, Suresh, Carlilse, John A, Carpick, Robert W, and Hwang, James. Tue . "Electrostatic MEMS devices with high reliability". United States. https://www.osti.gov/servlets/purl/1170735.
@article{osti_1170735,
title = {Electrostatic MEMS devices with high reliability},
author = {Goldsmith, Charles L and Auciello, Orlando H and Sumant, Anirudha V and Mancini, Derrick C and Gudeman, Chris and Sampath, Suresh and Carlilse, John A and Carpick, Robert W and Hwang, James},
abstractNote = {The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {2}
}

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Works referenced in this record:

Micromechanical membrane switches for microwave applications
conference, January 1995


Characteristics of micromachined switches at microwave frequencies
conference, January 1996

  • Goldsmith, C.; Randall, J.; Eshelman, S.
  • 1996 IEEE MTT-S International Microwave Symposium Digest
  • DOI: 10.1109/MWSYM.1996.511231

Performance of low-loss RF MEMS capacitive switches
journal, January 1998

  • Goldsmith, C. L.; Eshelman, S.
  • IEEE Microwave and Guided Wave Letters, Vol. 8, Issue 8
  • DOI: 10.1109/75.704410

Temperature Acceleration of Dielectric Charging in RF MEMS Capacitive Switches
conference, June 2006

  • Yuan, Xiaobin; Peng, Zhen; M. Hwang, James
  • 2006 IEEE MTT-S International Microwave Symposium Digest
  • DOI: 10.1109/MWSYM.2006.249923

Acceleration of Dielectric Charging in RF MEMS Capacitive Switches
journal, January 2006

  • Yuan, Xiaobin; Peng, Zhen; Hwang, James C. M.
  • IEEE Transactions on Device and Materials Reliability, Vol. 6, Issue 4
  • DOI: 10.1109/TDMR.2006.887417