skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Silicon carbide fibers and articles including same

Abstract

Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

Inventors:
;
Issue Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1168687
Patent Number(s):
8,940,391
Application Number:
12/901,309
Assignee:
Advanced Ceramic Fibers, LLC (Idaho Falls, ID)
DOE Contract Number:  
AC07-051D14517
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Garnier, John E, and Griffith, George W. Silicon carbide fibers and articles including same. United States: N. p., 2015. Web.
Garnier, John E, & Griffith, George W. Silicon carbide fibers and articles including same. United States.
Garnier, John E, and Griffith, George W. Tue . "Silicon carbide fibers and articles including same". United States. https://www.osti.gov/servlets/purl/1168687.
@article{osti_1168687,
title = {Silicon carbide fibers and articles including same},
author = {Garnier, John E and Griffith, George W},
abstractNote = {Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {1}
}

Patent:

Save / Share:

Works referenced in this record:

The effect of Zircaloy-4 substrate surface condition on the adhesion strength and corrosion of SiC coatings
journal, November 2005


Occurrence of airborne silicon carbide fibers during industrial production of silicon carbide.
journal, April 1985

  • Bye, E.; Eduard, Wijnand; Gjonnes, J.
  • Scandinavian Journal of Work, Environment & Health, Vol. 11, Issue 2
  • DOI: 10.5271/sjweh.2245

In Situ Formation of Silicon Carbide Nanofibers on Cordierite Substrates
journal, May 2007

  • Jayaseelan, Daniel D.; Lee, William E.; Amutharani, Devaraj
  • Journal of the American Ceramic Society, Vol. 90, Issue 5, p. 1603-1606
  • DOI: 10.1111/j.1551-2916.2007.01541.x

Growth of beta-silicon carbide whiskers by the VLS process
journal, April 1985

  • Milewski, J. V.; Gac, F. D.; Petrovic, J. J.
  • Journal of Materials Science, Vol. 20, Issue 4
  • DOI: 10.1007/BF01026309

Preparation of Silicon Carbide Fiber from Activated Carbon Fiber and Gaseous Silicon Monoxide
journal, June 1994