Silicon carbide fibers and articles including same
Abstract
Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.
- Inventors:
- Issue Date:
- Research Org.:
- Idaho National Laboratory (INL), Idaho Falls, ID (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1168687
- Patent Number(s):
- 8940391
- Application Number:
- 12/901,309
- Assignee:
- Advanced Ceramic Fibers, LLC (Idaho Falls, ID)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
- DOE Contract Number:
- AC07-051D14517
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Garnier, John E, and Griffith, George W. Silicon carbide fibers and articles including same. United States: N. p., 2015.
Web.
Garnier, John E, & Griffith, George W. Silicon carbide fibers and articles including same. United States.
Garnier, John E, and Griffith, George W. Tue .
"Silicon carbide fibers and articles including same". United States. https://www.osti.gov/servlets/purl/1168687.
@article{osti_1168687,
title = {Silicon carbide fibers and articles including same},
author = {Garnier, John E and Griffith, George W},
abstractNote = {Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {1}
}
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