Title: Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

Abstract

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowiresmore » and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer. « less

Inventors:

Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

Issue Date:

2015-01-13

Research Org.:

Univ. of California, Oakland, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1167211

Patent Number(s):

8932940

Application Number:

13/126,381

Assignee:

The Regents of the University of California (Oakland, CA)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02543 - {Phosphides}
H01L21/02546 - {Arsenides}
H01L21/02549 - {Antimonides}
H01L21/02573 - {Conductivity type}
H01L21/02603 - {Nanowires}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02636 - {Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials}
H01L27/0605 - {integrated circuits made of compound material, e.g. AIIIBV}
H01L29/0665 - {the shape of the body defining a nanostructure
H01L29/0673 - {oriented parallel to a substrate}
H01L29/0676 - {oriented perpendicular or at an angle to a substrate}
H01L29/068 - {comprising a junction}
H01L29/20 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L29/205 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/267 - in different semiconductor regions {, e.g. heterojunctions
H01L29/7784 - {with delta or planar doped donor layer
H01L29/88 - Tunnel-effect diodes
H01L31/035281 - {Shape of the body}
H01L31/03529 - {Shape of the potential jump barrier or surface barrier}
H01L31/074 - comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
H01L33/08 - with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L33/20 - with a particular shape, e.g. curved or truncated substrate
H01L33/32 - containing nitrogen

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S438/938 - Lattice strain control or utilization
Y10S438/967 - Semiconductor on specified insulator
Y10S438/974 - Substrate surface preparation
Y10S977/762 - Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
Y10S977/763 - formed along or from crystallographic terraces or ridges
Y10S977/764 - with specified packing density
Y10S977/765 - with specified cross-sectional profile, e.g. belt-shaped
Y10S977/813 - Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
Y10S977/815 - Group III-V based compounds, e.g. AlaGabIncNxPyAsz
Y10S977/819 - III-As based compounds, e.g. AlxGayInzAs
Y10S977/825 - Heterojunction formed between semiconductor materials that differ in that they belong to different periodic table groups

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DOE Contract Number:  

FG36-08GO18016

Resource Type:

Patent

Resource Relation:

Patent File Date: 2009 Oct 28

Country of Publication:

United States

Language:

English

Subject:

77 NANOSCIENCE AND NANOTECHNOLOGY