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Title: Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

Abstract

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowiresmore » and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.« less

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1167211
Patent Number(s):
8932940
Application Number:
13/126,381
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG36-08GO18016
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009 Oct 28
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Wang, Deli, Soci, Cesare, Bao, Xinyu, Wei, Wei, Jing, Yi, and Sun, Ke. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication. United States: N. p., 2015. Web.
Wang, Deli, Soci, Cesare, Bao, Xinyu, Wei, Wei, Jing, Yi, & Sun, Ke. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication. United States.
Wang, Deli, Soci, Cesare, Bao, Xinyu, Wei, Wei, Jing, Yi, and Sun, Ke. Tue . "Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication". United States. https://www.osti.gov/servlets/purl/1167211.
@article{osti_1167211,
title = {Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication},
author = {Wang, Deli and Soci, Cesare and Bao, Xinyu and Wei, Wei and Jing, Yi and Sun, Ke},
abstractNote = {Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {1}
}

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Works referenced in this record:

Epitaxial Growth of III-V Nanowires on Group IV Substrates
journal, February 2007


Critical diameter for III-V nanowires grown on lattice-mismatched substrates
journal, January 2007


Equilibrium limits of coherency in strained nanowire heterostructures
journal, June 2005


Gallium arsenide and other compound semiconductors on silicon
journal, October 1990


Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
journal, May 2008


Manipulations of size and density of self-assembled quantum dots grown by MOVPE
journal, July 1998


Au-Free Epitaxial Growth of InAs Nanowires
journal, August 2006


Catalyst-free growth of In(As)P nanowires on silicon
journal, August 2006


Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings
journal, July 2007


Epitaxial III−V Nanowires on Silicon
journal, October 2004


Control of InAs Nanowire Growth Directions on Si
journal, October 2008


Atomic processes in crystal growth
journal, January 1994


Vapor-liquid-solid mechanism of single crystal growth
journal, March 1964