Vacuum encapsulated hermetically sealed diamond amplified cathode capsule and method for making same

Title: Vacuum encapsulated hermetically sealed diamond amplified cathode capsule and method for making same

Abstract

A vacuum encapsulated, hermetically sealed cathode capsule for generating an electron beam of secondary electrons, which generally includes a cathode element having a primary emission surface adapted to emit primary electrons, an annular insulating spacer, a diamond window element comprising a diamond material and having a secondary emission surface adapted to emit secondary electrons in response to primary electrons impinging on the diamond window element, a first cold-weld ring disposed between the cathode element and the annular insulating spacer and a second cold-weld ring disposed between the annular insulating spacer and the diamond window element. The cathode capsule is formed by a vacuum cold-weld process such that the first cold-weld ring forms a hermetical seal between the cathode element and the annular insulating spacer and the second cold-weld ring forms a hermetical seal between the annular spacer and the diamond window element whereby a vacuum encapsulated chamber is formed within the capsule.

Inventors:: Rao, Triveni; Walsh, John; Gangone, Elizabeth

Issue Date:: 2014-12-30

Research Org.:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1166751

Patent Number(s):: 8,922,107

Application Number:: 14/115,534

Assignee:: Brookhaven Science Associates, LLC (Upton, NY) CHO

DOE Contract Number:: AC02-98CH10886

Resource Type:: Patent

Resource Relation:: Patent File Date: 2012 May 09

Country of Publication:: United States

Language:: English

Subject:: 30 DIRECT ENERGY CONVERSION

Citation Formats


                    Rao, Triveni, Walsh, John, and Gangone, Elizabeth. Vacuum encapsulated hermetically sealed diamond amplified cathode capsule and method for making same.  United States: N. p., 2014. 
        Web.

Copy to clipboard


                    Rao, Triveni, Walsh, John, & Gangone, Elizabeth. Vacuum encapsulated hermetically sealed diamond amplified cathode capsule and method for making same.  United States.

Copy to clipboard


                    Rao, Triveni, Walsh, John, and Gangone, Elizabeth. Tue .  
        "Vacuum encapsulated hermetically sealed diamond amplified cathode capsule and method for making same".  United States.  https://www.osti.gov/servlets/purl/1166751.

Copy to clipboard


                    
@article{osti_1166751,

  title        = {Vacuum encapsulated hermetically sealed diamond amplified cathode capsule and method for making same},

  author       = {Rao, Triveni and Walsh, John and Gangone, Elizabeth},

  abstractNote = {A vacuum encapsulated, hermetically sealed cathode capsule for generating an electron beam of secondary electrons, which generally includes a cathode element having a primary emission surface adapted to emit primary electrons, an annular insulating spacer, a diamond window element comprising a diamond material and having a secondary emission surface adapted to emit secondary electrons in response to primary electrons impinging on the diamond window element, a first cold-weld ring disposed between the cathode element and the annular insulating spacer and a second cold-weld ring disposed between the annular insulating spacer and the diamond window element. The cathode capsule is formed by a vacuum cold-weld process such that the first cold-weld ring forms a hermetical seal between the cathode element and the annular insulating spacer and the second cold-weld ring forms a hermetical seal between the annular spacer and the diamond window element whereby a vacuum encapsulated chamber is formed within the capsule.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2014},

  month        = {12}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Vacuum Encapsulated, High Temperature Diamond Amplified Cathode Capsule and Method for Making Same
patent-application, December 2013

Rao, Triveni; Walsh, John; Gangone, Elizabeth
US Patent Application 13/896459; 20130320295
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220130320295%22.PGNR.&OS=DN/20130320295&RS=DN/20130320295

Similar records in DOE Patents and OSTI.GOV collections:

Vacuum encapsulated, high temperature diamond amplified cathode capsule and method for making same

Patent Rao, Triveni; Walsh, Josh; Gangone, Elizabeth

A vacuum encapsulated, hermetically sealed cathode capsule for generating an electron beam of secondary electrons, which generally includes a cathode element having a primary emission surface adapted to emit primary electrons, an annular insulating spacer, a diamond window element comprising a diamond material and having a secondary emission surface adapted to emit secondary electrons in response to primary electrons impinging on the diamond window element, a first high-temperature solder weld disposed between the diamond window element and the annular insulating spacer and a second high-temperature solder weld disposed between the annular insulating spacer and the cathode element. The cathode capsulemore »« less
Full Text Available
Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same

Patent Resnick, Paul J.; Langlois, Eric

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anodemore »« less
Full Text Available
Metalized, three-dimensional structured oxygen cathode materials for lithium/air batteries and method for making and using the same

Patent Xing, Weibing; Buettner-Garrett, Josh

This disclosure relates generally to cathode materials for electrochemical energy cells, more particularly to metal/air electrochemical energy cell cathode materials containing silver vanadium oxide and methods of making and using the same. The metal/air electrochemical energy cell can be a lithium/air electrochemical energy cell. Moreover the silver vanadium oxide can be a catalyst for one or more of oxidation and reduction processes of the electrochemical energy cell.
Full Text Available
Hermetically sealed button-type electrochemical cell and method for making same

Patent Epstein, J.; Marincic, N.

An ultra-thin hermetically sealed button-type electrochemical cell is disclosed comprising a pair of mating metallic housing members, at least one of which is generally dish shaped to define an enclosed space therebetween. A peripheral opening defining a fill port is formed in one of the housing members, preferably at the junction formed by the mating surfaces. The interfacing surfaces of the cell housing members are welded together subsequent to the insertion of the internal cell components and prior to the addition of the electrolyte to form a hermetic seal. The electrolyte may then be added and the fill port hermeticallymore »« less
Silicon release coating, method of making same, and method of using same

Patent Jonczyk, Ralf [Wilmington, DE]

A method of making a release coating includes the following steps: forming a mixture that includes (a) solid components comprising (i) 20-99% silicon by weight and (ii) 1-80% silicon nitride by weight and (b) a solvent; applying the mixture to an inner portion of a crucible or graphite board adapted to form an ingot or wafer comprising silicon; and annealing the mixture in a nitrogen atmosphere at a temperature ranging from 1000 to 2000.degree. C. The invention may also relate to release coatings and methods of making a silicon ingot or wafer including the use of a release coating.
Full Text Available

Similar Records

Title: Vacuum encapsulated hermetically sealed diamond amplified cathode capsule and method for making same

Abstract

Citation Formats

Vacuum Encapsulated, High Temperature Diamond Amplified Cathode Capsule and Method for Making Same patent-application, December 2013

Vacuum Encapsulated, High Temperature Diamond Amplified Cathode Capsule and Method for Making Same
patent-application, December 2013