Global to push GA events into
skip to main content

Title: Method of forming emitters for a back-contact solar cell

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1165436
Assignee:
SunPower Corporation (San Jose, CA) GFO
Patent Number(s):
8,912,038
Application Number:
14/302,256
Contract Number:
FC36-07GO17043
Resource Relation:
Patent File Date: 2014 Jun 11
Research Org:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Other works cited in this record:

Trench process and structure for backside contact solar cells with polysilicon doped regions
patent, October 2010

Trench process and structure for backside contact solar cells with polysilicon doped regions
patent, December 2010

Front contact solar cell with formed emitter
patent-application, August 2009

Backside Contact Solar Cell With Formed Polysilicon Doped Regions
patent-application, June 2010

Back Side Contact Solar Cell Structures And Fabrication Processes
patent-application, January 2011

Similar records in DOepatents and OSTI.GOV collections: