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Title: Impurity-induced disorder in III-nitride materials and devices

Abstract

A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1164349
Patent Number(s):
8895335
Application Number:
13/558,516
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wierer, Jr., Jonathan J, and Allerman, Andrew A. Impurity-induced disorder in III-nitride materials and devices. United States: N. p., 2014. Web.
Wierer, Jr., Jonathan J, & Allerman, Andrew A. Impurity-induced disorder in III-nitride materials and devices. United States.
Wierer, Jr., Jonathan J, and Allerman, Andrew A. Tue . "Impurity-induced disorder in III-nitride materials and devices". United States. https://www.osti.gov/servlets/purl/1164349.
@article{osti_1164349,
title = {Impurity-induced disorder in III-nitride materials and devices},
author = {Wierer, Jr., Jonathan J and Allerman, Andrew A},
abstractNote = {A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {11}
}

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Works referenced in this record:

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