Impurity-induced disorder in III-nitride materials and devices
Abstract
A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1164349
- Patent Number(s):
- 8895335
- Application Number:
- 13/558,516
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Wierer, Jr., Jonathan J, and Allerman, Andrew A. Impurity-induced disorder in III-nitride materials and devices. United States: N. p., 2014.
Web.
Wierer, Jr., Jonathan J, & Allerman, Andrew A. Impurity-induced disorder in III-nitride materials and devices. United States.
Wierer, Jr., Jonathan J, and Allerman, Andrew A. Tue .
"Impurity-induced disorder in III-nitride materials and devices". United States. https://www.osti.gov/servlets/purl/1164349.
@article{osti_1164349,
title = {Impurity-induced disorder in III-nitride materials and devices},
author = {Wierer, Jr., Jonathan J and Allerman, Andrew A},
abstractNote = {A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {11}
}
Works referenced in this record:
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
patent-application, June 2005
- Ishibashi, Akihiko; Tsujimura, Ayumu; Hasegawa, Yoshiaki
- US Patent Application 11/063533; 20050142682
Nitride semiconductor laser device and manufacturing method thereof
patent-application, July 2006
- Ohno, Hiroshi
- US Patent Application 11/336841; 20060165143
Wafer Backside Defectivity Clean-up Utilizing Selective Removal of Substrate Material
patent-application, January 2013
- Clark, Jennifer C.; Kinser, Emily R.; Melville, Ian D.
- US Patent Application 13/187917; 20130020682
Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering
journal, May 2002
- Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.
- Journal of Electronic Materials, Vol. 31, Issue 5
Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm
journal, July 2000
- Gmachl, Claire; Ng, Hock M.; Cho, Alfred Y.
- Applied Physics Letters, Vol. 77, Issue 3
Impurity‐induced layer disordering of high gap In y (Al x Ga 1− x ) 1− y P heterostructures
journal, April 1988
- Deppe, D. G.; Nam, D. W.; Holonyak, N.
- Applied Physics Letters, Vol. 52, Issue 17
Impurity diffusion and layer interdiffusion in Al x Ga 1− x As‐GaAs heterostructures
journal, August 1988
- Deppe, D. G.; Holonyak, N.; Plano, W. E.
- Journal of Applied Physics, Vol. 64, Issue 4
GaN/AlN-based quantum-well infrared photodetector for 1.55 μm
journal, July 2003
- Hofstetter, Daniel; Schad, Sven-Silvius; Wu, Hong
- Applied Physics Letters, Vol. 83, Issue 3
Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method
journal, October 2009
- Yang, Jung-Seung; Sodabanlu, Hassanet; Sugiyama, Masakazu
- Applied Physics Letters, Vol. 95, Issue 16
Impurity‐induced disordering of single well Al x Ga 1− x As‐GaAs quantum well heterostructures
journal, February 1984
- Meehan, K.; Brown, J. M.; Camras, M. D.
- Applied Physics Letters, Vol. 44, Issue 4
Interdiffusion between GaAs and AlAs
journal, August 1976
- Chang, L. L.; Koma, A.
- Applied Physics Letters, Vol. 29, Issue 3
Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
journal, January 1998
- McCluskey, M. D.; Romano, L. T.; Krusor, B. S.
- MRS Proceedings, Vol. 537
Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
journal, January 1998
- Chan, Michael C. Y.; Tsang, Kwok-On; Li, E. Herbert
- MRS Proceedings, Vol. 537
Sub-picosecond all-optical gate utilizing aN intersubband transition
journal, January 2005
- Iizuka, Norio; Kaneko, Kei; Suzuki, Nobuo
- Optics Express, Vol. 13, Issue 10
Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions
journal, April 2006
- Nicolay, S.; Feltin, E.; Carlin, J. -F.
- Applied Physics Letters, Vol. 88, Issue 15
Annealing of GaN under high pressure of nitrogen
journal, October 2002
- Porowski, S.; Grzegory, I.; Kolesnikov, D.
- Journal of Physics: Condensed Matter, Vol. 14, Issue 44
Disorder of an AlAs‐GaAs superlattice by impurity diffusion
journal, May 1981
- Laidig, W. D.; Holonyak, N.; Camras, M. D.
- Applied Physics Letters, Vol. 38, Issue 10
Works referencing / citing this record:
Methods for forming photonic integrated circuits based on quantum cascade structures
patent, August 2017
- Goyal, Anish K.; Diehl, Laurent; Pfluegl, Christian
- US Patent Document 9,735,549
Photonic integrated circuits based on quantum cascade structures
patent, September 2016
- Goyal, Anish K.; Diehl, Laurent; Pfluegl, Christian
- US Patent Document 9,450,053