Title: Method of fabricating vertically aligned group III-V nanowires

Abstract

A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

Inventors:

Wang, George T; Li, Qiming

Issue Date:

Tue Nov 25 00:00:00 EST 2014

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1164348

Patent Number(s):

8895337

Application Number:

13/743,433

Assignee:

Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y40/00 - Manufacture or treatment of nanostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L33/04 - with a quantum effect structure or superlattice, e.g. tunnel junction
H01L33/18 - within the light emitting region
H01L33/24 - of the light emitting region, e.g. non-planar junction

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/762 - Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY