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Title: Method of fabricating vertically aligned group III-V nanowires

Abstract

A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1164348
Patent Number(s):
8,895,337
Application Number:
13/743,433
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Wang, George T, and Li, Qiming. Method of fabricating vertically aligned group III-V nanowires. United States: N. p., 2014. Web.
Wang, George T, & Li, Qiming. Method of fabricating vertically aligned group III-V nanowires. United States.
Wang, George T, and Li, Qiming. Tue . "Method of fabricating vertically aligned group III-V nanowires". United States. https://www.osti.gov/servlets/purl/1164348.
@article{osti_1164348,
title = {Method of fabricating vertically aligned group III-V nanowires},
author = {Wang, George T and Li, Qiming},
abstractNote = {A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {11}
}

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Works referenced in this record:

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