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Title: Structured wafer for device processing

Abstract

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1164347
Patent Number(s):
8,895,364
Application Number:
14/243,665
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Okandan, Murat, and Nielson, Gregory N. Structured wafer for device processing. United States: N. p., 2014. Web.
Okandan, Murat, & Nielson, Gregory N. Structured wafer for device processing. United States.
Okandan, Murat, and Nielson, Gregory N. Tue . "Structured wafer for device processing". United States. https://www.osti.gov/servlets/purl/1164347.
@article{osti_1164347,
title = {Structured wafer for device processing},
author = {Okandan, Murat and Nielson, Gregory N},
abstractNote = {A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {11}
}

Patent:

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